High-k shallow traps observed by charge pumping with varying discharging times

Ho, Shinn‐Ying; Chang, Ting Chang; Lu, Ying‐Hsin; Wang, Bin Wei; Lo, Wen Hung; Chen, Ching En; Tsai, Jyun Yu; Chen, Hua Mao; Liu, Kuan Ju; Tseng, Tseung‐Yuen; Cheng, Osbert; Huang, Cheng Tung; Chen, Tsai Fu; Cao, Xi Xin

doi:10.1063/1.4828719

Cited by 7 publications

(2 citation statements)

References 28 publications

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“…5 and the extracted SS results are summarized in Table I. In the high field operation, the Poole-Frenkel tunneling, however, is gradually distinct [13]. For the long-channel device, it seems that the higher annealing atmosphere provided the better fixing in oxygen vacancy and reduced more oxide trap amount, as shown in Fig.…”

Section: Resultsmentioning

confidence: 93%

Gate Leakage for 28 nm Stacked HfZrO<sub><italic>x</italic></sub> Dielectric of p-Channel MOSFETs After Decoupled Plasma Nitridation Treatment With Annealing Temperatures

Wang

Lee

et al. 2014

IEEE Trans. Plasma Sci.

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Choosing a plasma nitridation treatment with some annealing technique incorporated into the gate engineering is helpful to fix the existence of oxygen vacancy and promote the crystallization temperature in high-k dielectric. Here is the higher annealing atmosphere as a whole providing the better drive current in p-channel metal-oxide-semiconductor fieldeffect transistors, compared with the lower one. The interface traps for the former, however, is slightly greater than the latter, causing a higher gate leakage in the middle electrical field operated at inversion mode. This phenomenon is more obvious in the tested short-channel device. A sandwich type of HfO x /ZrO y /HfO x as gate dielectric at 28 nm node process is a fine selection to withstand or decrease the possibility of the formation of micro-or nanocrystallization increasing the gate leakage.Index Terms-Annealing, decoupled plasma nitridation (DPN), gate leakage, high-k dielectric, MOSFET.

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Section: Resultsmentioning

confidence: 93%

Gate Leakage for 28 nm Stacked HfZrO<sub><italic>x</italic></sub> Dielectric of p-Channel MOSFETs After Decoupled Plasma Nitridation Treatment With Annealing Temperatures

Wang

Lee

et al. 2014

IEEE Trans. Plasma Sci.

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“…The reason for the above charge decay behavior is as follows: on the one hand, the traps with different energy levels can capture carriers in BTO/EP composites. Carriers captured usually stay for a very short time (10 −12 s) in shallow traps and can migrate through hopping conduction [ 54 ]. However, the carriers caught in deep traps may stay for a few minutes to several days, even longer in epoxy composites [ 55 ].…”

Section: Resultsmentioning

confidence: 99%

Interfacial Insight of Charge Transport in BaTiO3/Epoxy Composites

et al. 2023

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Space charge accumulation greatly influences the dielectric performance of epoxy composites under high voltage. It has been reported that nano-fillers can suppress the charge accumulation in the bulk of insulation materials. However, it is still unclear how the nano-fillers influence the charge distribution at the interface between the filler and polymeric matrix. In this work, the dielectric properties and the local dynamic charge mobility behavior at the interface of barium titanate/epoxy resin (BTO/EP) composites were investigated from both bulk and local perspectives based on the macroscopic test techniques and in-situ Kelvin probe force microscopy (KPFM) methods. Charge injection and dissipation behavior exhibited significant discrepancies at different interfaces. The interface between BTO and epoxy is easy to accumulates a negative charge, and nanoscale BTO (n-BTO) particles introduces deeper traps than microscale BTO (m-BTO) to inhibit charge migration. Under the same bias condition, the carriers are more likely to accumulate near the n-BTO than the m-BTO particles. The charge dissipation rate at the interface region in m-BTO/EP is about one order of magnitude higher than that of n-BTO/EP. This work offers experimental support for understanding the mechanism of charge transport in dielectric composites.

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A characteristic improved technique and analysis with plasma treatment to the electrode on oxide-based resistive random access memory

Lin

Chang

Pan

et al. 2020

Journal of Alloys and Compounds

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High-k shallow traps observed by charge pumping with varying discharging times

Abstract: Articles you may be interested inTemperature dependence of the resistive switching-related currents in ultra-thin high-k based MOSFETs

Cited by 7 publications

References 28 publications

Gate Leakage for 28 nm Stacked HfZrO<sub><italic>x</italic></sub> Dielectric of p-Channel MOSFETs After Decoupled Plasma Nitridation Treatment With Annealing Temperatures

Gate Leakage for 28 nm Stacked HfZrO<sub><italic>x</italic></sub> Dielectric of p-Channel MOSFETs After Decoupled Plasma Nitridation Treatment With Annealing Temperatures

Interfacial Insight of Charge Transport in BaTiO3/Epoxy Composites

A characteristic improved technique and analysis with plasma treatment to the electrode on oxide-based resistive random access memory

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