High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz

Shrestha, Pawana; Guidry, Matthew; Romanczyk, Brian; Hatui, Nirupam; Wurm, Christian; Krishna, Athith; Pasayat, Shubhra S.; Karnaty, Rohit R.; Keller, S.; Buckwalter, James F.; Mishra, Umesh K.

doi:10.1109/led.2020.2980841

Cited by 60 publications

(25 citation statements)

References 8 publications

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“…The large-signal linearity of the HEMT is significantly improved when the HEMT is passivated by TiO 2 . The improved device linearity of the TiO 2 -HEMT is attributed to increased g m,max [ 18 ] and GVS values [ 20 ].…”

Section: Resultsmentioning

confidence: 99%

“…The performance of AlGaN/GaN HEMT technology is limited by charge trapping effects. Consequently, various candidates for passivation has been attempted to neutralize the net surface charge arising from the combination of surface states and the polarized barrier [ 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 ]. Most works focus on the performance of the passivated AlGaN/GaN HEMTs at room temperature.…”

Section: Introductionmentioning

confidence: 99%

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Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors

Lin

2020

Micromachines

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This study proposes AlGaN/GaN/silicon high-electron mobility transistors (HEMTs) grown by a metallorganic chemical vapor deposition (MOCVD) system. The large-signal linearity and high-frequency noise of HEMTs without and with different passivation layers are compared. The experimental data show that the addition of a TiO2 passivation layer to undoped AlGaN/GaN HEMT’s increases the value of the third-order intercept point (OIP3) by up to 70% at 2.4 GHz. Furthermore, the minimum noise figure (NFmin) of the HEMT with TiO2 passivation is significantly reduced.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors

Lin

2020

Micromachines

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“…Multichannel structures are shown to provide good linearity performance by increasing the number of channels where the current flows and by decreasing the effect of source resistance [12]. N-polar GaN HEMTs also support very high linearity figures of merit (FOMs) even at high frequencies [13], [14].…”

Section: Introductionmentioning

confidence: 99%

AlGaN/GaN-Based Laterally Gated High-Electron-Mobility Transistors With Optimized Linearity

Odabasi

Yilmaz

Aras

et al. 2021

IEEE Trans. Electron Devices

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In this work, highly linear AlGaN/GaN laterally gated (or buried gate) high-electron-mobility transistors (HEMTs) are reported. The effect of gate dimensions on source-access resistance and the linearity of laterally gated devices are investigated experimentally in detail for the first time. Transistors with different gate dimensions and conventional planar devices are fabricated using two-step electron beam lithography (EBL). Current-voltage, source-access resistance, small-signal, and two-tone measurements are performed to evaluate the linearity of devices. Contrary to conventional planar HEMTs, the intrinsic transconductance of laterally gated devices monotonically increases with increasing gate voltage, showing a similar behavior as junction field-effect transistors (FETs).The source-access resistance shows a polynomial increase with the drain current, which can be reduced by decreasing the filling ratio of the buried gates. Through the optimization of these two competing factors, i.e., intrinsic transconductance and the source-access resistance, flat transconductance with high linearity is achieved experimentally. The laterally gated structure shows flat transconductance and small-signal power gain over a larger span of gate voltage that is 2.5 times higher than a planar device. Moreover, 6.9-dB improvement in output intercept point (OIP3)/P DC is

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“…Linearity improvement at the device level has attracted considerable attention, and significant efforts have been made to enhance device linearity by applying double metal gates (DMGs), fin structures, and transitional recessed gate (TRG) structures and optimizing the epitaxial structure. [12][13][14][15][16][17][18][19][20][21][22][23] The transconductance (g m ) of GaNbased HEMTs decreases quickly with increasing gate voltage after reaching its peak value, which is considered a critical issue for the nonlinearity performance. [17,24] Nonzero derivatives (g 0 m , g 00 m ) of the small-signal DC gain (g m ) caused by the nonlinear nature of the device will produce a large third-order intermodulation amplitude (IMD3) in PAs.…”

Section: Introductionmentioning

confidence: 99%

Simulation of a Parallel Dual‐Metal‐Gate Structure for AlGaN/GaN High‐Electron‐Mobility Transistor High‐Linearity Applications

Jia

Wang

Chen

et al. 2021

Physica Status Solidi (a)

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This article proposes a parallel dual‐metal‐gate structure (PDM) of AlGaN/GaN high‐electron‐mobility transistors (HEMTs) for high‐linearity applications. Cancellation of the third‐order derivative of the curve (is achieved by splitting the device into two subcells in parallel with different gate metals. The two subcells have different threshold voltages. When the same bias voltage is applied, the operating states of the two subcells are independently controlled by the gate bias voltages. The maximum transconductance () of the conventional single‐metal‐gate (SMG) HEMT, double‐metal‐gate (DMG) HEMT, and PDM‐HEMT is all comparable, whereas of the proposed structure is 75% lower than that of the SMG HEMT and 47.8% lower than that of the DMG HEMT. The effects of the differences and width ratios of the work function on are studied and compared, and a suitably designed PDM‐HEMT that can considerably improve linearity without degrading other performance aspects is obtained. This research has significant implications for high‐linearity applications.

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High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz

Cited by 60 publications

References 8 publications

Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors

Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors

AlGaN/GaN-Based Laterally Gated High-Electron-Mobility Transistors With Optimized Linearity

Simulation of a Parallel Dual‐Metal‐Gate Structure for AlGaN/GaN High‐Electron‐Mobility Transistor High‐Linearity Applications

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