High linearity silicon DC Kerr modulator enhanced by slow light for 112 Gbit/s PAM4 over 2 km single mode fiber transmission

Xia, Penghui; Yu, Hui; Zhang, Qiang; Wang, Xiaofei; Fu, Zhilei; Huang, Qikai; Ning, Nannan; Wei, Zhujun; Jiang, Xiaoqing; Yang, Jianyi

doi:10.1364/oe.458184

Cited by 13 publications

(5 citation statements)

References 34 publications

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“…The signal was first amplified by a radio-frequency amplifier (RF AMP, SHF 807C) and then passed to a DC bias tee (RF AMP, SHF 807C) to adjust the DC bias point. The signal is then input to a Mach-Zehnder modulation (MZM, self-developed silicon optical modulator 7 ). Meanwhile, an O-band tunable laser (TSL550-A) generates an optical carrier with a wavelength of 1300.05nm and sends it to the MZM where it undergoes intensity modulation to obtain a 56G baud/s PAM-4 optical signal.…”

Section: Resultsmentioning

confidence: 99%

Computation efficient and low jitter timing synchronization scheme enabled a single-lane 112 Gb/s PAM-4 optical link

Chen,

Lu,

Yin

et al. 2023

Fourteenth International Conference on Information Optics and Photonics (CIOP 2023)

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Section: Resultsmentioning

confidence: 99%

Computation efficient and low jitter timing synchronization scheme enabled a single-lane 112 Gb/s PAM-4 optical link

Chen,

Lu,

Yin

et al. 2023

Fourteenth International Conference on Information Optics and Photonics (CIOP 2023)

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“…Note that for a PCW-MZ modulator, the driving voltage will be higher if the device length is shorter (for a given group index), which is similar to a conventional MZ modulator. In addition, strained silicon [88] and the DC Kerr effect [89] have been shown to be beneficial for high-speed modulation, and a PCW-MZ slow-light modulator based on the DC Kerr effect is demonstrated [90]. The experimental results show that the device can achieve 112 Gb s −1 PAM4 modulations.…”

Section: Other Photonic Crystal Modulatorsmentioning

confidence: 99%

Silicon electro-optic modulators based on microscopic photonic structures: from principles to advanced modulation formats

Yu¹,

Zeng²,

Xiang³

et al. 2023

J. Phys. D: Appl. Phys.

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This paper reviews the progress of electro-optic modulators composed of silicon-based microscopic photonic structures. The basic principles, device structures, and advanced modulation capability of different geometric types are detailed for micro-ring modulators, photonic crystal modulators, and other related modulators. We illustrate the device operation mechanism with a focus on its photonic aspect and discuss their impacts on the modulator speed, power consumption, and thermal stabilities. The cavity enhancement and slow light effect significantly reduce the device footprint and power consumption, with the trade-off of limited operation wavelength range. Other emerging microscopic photonic structure-based silicon modulators for advanced modulation formats exhibit promising performance for further optimizations. Finally, we discuss the existing challenges and further directions of microscopic photonic structure-based silicon modulators for pertinent applications.

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“…This section presents an analysis of the power consumption envelope (the DSP and optical engines; not the total power) for the key candidate architectures capable of achieving 1.6 Tbps transmission. The system architectures considered are as follows: 1) 8λ×200 Gbps WDM IMDD: This configuration utilizes silicon photonic (SiP) modulators, which are commonly utilized at these data rates [15]. 2) 4λ×400 Gbps WDM IMDD: Compared to the 8×200 Gbps configuration, this configuration requires higher bandwidth modulators.…”

Section: Power Consumption Analysismentioning

confidence: 99%

Next-Generation O-Band Coherent Transmission for 1.6 Tbps 10 km Intra-Datacenter Interconnects

Berikaa,

Alam,

Bernal

et al. 2024

J. Lightwave Technol.

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With the exponential growth of internet traffic, driven by the increasing number of connected devices and dataintensive applications, there is an urgent need to address the surging demand for higher capacity in datacenter communications. This paper proposes using O-band single-carrier coherent transmission to achieve 1.6 Tbps for intra-datacenter reach (2-10 km), leveraging the advancements in next-generation DACs and the TFLN platform. To support our proposal, we assess experimentally the gain of employing 256 GSa/s interleaved DACs compared to the current state-of-the-art 128 GSa/s DACs. Additionally, we explore the feasibility of utilizing cost-effective DFB lasers in these short-reach systems. Using the 128 GSa/s DAC and DFB lasers, we transmit 120 Gbaud DP-64QAM over 10 km of SSMF under the 20% overhead SD-FEC threshold, featuring a net rate of 1.2 Tbps. Switching to 256 GSa/s DAC, we achieve net 1.6 Tbps transmission over 10 km with 167 Gbaud DP-64QAM below the 25% SD-FEC BER threshold. We observe that the power penalty of using DFB lasers compared to ECLs is less than 1 dB. Furthermore, this study includes a comprehensive analysis of the power consumption envelope for various candidate configurations targeting 1.6 Tbps operation. The comparison reveals the competitiveness of the O-band single-carrier coherent solution, attributed to its simpler architecture and the inherent features of the TFLN platform. The analysis highlights the potential of the proposed solution as a power-efficient and highperformance option for meeting the demanding requirements of 1.6 Tbps Ethernet. Index Terms-Datacenter interconnects, coherent communications, optical fiber communication, O-band coherent transmission, power consumption, thin-film lithium niobate. 128 GSa/s (1 DAC/quad) 256 GSa/s (2 DACs/quad) Fig. 1. Review of recent O-band transmission system demonstrations.

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High linearity silicon DC Kerr modulator enhanced by slow light for 112 Gbit/s PAM4 over 2 km single mode fiber transmission

Cited by 13 publications

References 34 publications

Computation efficient and low jitter timing synchronization scheme enabled a single-lane 112 Gb/s PAM-4 optical link

Computation efficient and low jitter timing synchronization scheme enabled a single-lane 112 Gb/s PAM-4 optical link

Silicon electro-optic modulators based on microscopic photonic structures: from principles to advanced modulation formats

Next-Generation O-Band Coherent Transmission for 1.6 Tbps 10 km Intra-Datacenter Interconnects

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