High‐mobility Ambipolar Transistors and High‐gain Inverters from a Donor–Acceptor Copolymer Semiconductor

Reversible Conversion of the Majority Carrier Type in Solution‐Processed Ambipolar Quinoidal Oligothiophene Thin Films

“…[4][5][6][7][8] A number of ambipolar organic fi eld-effect transistors (OFETs) have been previously reported using blends [ 4 , 5 , 9 ] or heterostructures [ 7 , 10 , 11 ] of p-and n-type materials. However, the most attractive approach for the realization of ambipolar FETs is based on the use of single-component low bandgap organic semiconducting materials that enables the injection of both holes and electrons from a same metal electrode and notably simplify the device fabrication procedures.…”

Poly(3‐hexylthiophene)‐b‐poly(3‐cyclohexylthiophene): Synthesis, microphase separation, thin film transistors, and photovoltaic applications

“…23,52,53 Both HcH63 and HcH77 block copolymers showed typical hole-transport characteristics with clear current modulation as shown in Figure 7. HcH77 copolymer showed an average saturation region hole mobility of 1.9 Â 10 À3 cm 2 /Vs which was calculated from transfer curves [ Fig.…”

Recent Advances in High-Mobility Polymeric Semiconductor Materials

“…传统的双极性逻辑互补电路的构造过程复杂, 需 要采用掩模板法将两种不同的 p-型和 n-型有机/聚合物 半导体材料精确沉积在亚微米级衬底上 [79] . 采用单一组 分的双极性材料集成在亚微米级衬底上的方法将简化 器件制备工艺和降低器件制作的成本 [79] . 双极性聚合物 半导体材料的设计除了考虑聚合物给体/受体单元的共 平面性和对称性以外, 该类材料的性能还受材料的溶解 性、化学稳定性、分子量、能级结构、结晶性以及堆积 排列方式等因素的影响.…”

“…相比 PDVT-10, PDPP-4FTVT 具有更低的 HOMO/LUMO 能级, 更小的 . 此外, Jenekhe 等 [79] 基于单一 PNIBT 退 火薄膜构造了第一个双极性聚合物倒相器件, 其增益值 高达 30. 2012 年, Wudl 等 [92] …”