High-Mobility Amorphous InGaZnO Thin-Film Transistors With Nitrogen Introduced via Low-Temperature Annealing

Yu, Young Moon; Lv, Nannan; Zhang, Dongli; Wei, Yiran; Wang, Ming-Xiang

doi:10.1109/led.2021.3106273

Cited by 16 publications

(8 citation statements)

References 34 publications

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“…Various strategies have been suggested to improve the carrier mobility of oxide TFTs including controlled cation composition, 14−17 modified postdeposition processes, 18 a crystallized channel, 19−23 and an advanced channel architecture. 24−34 Among them, the bandgap-engineering concept of a multilayer heterojunction or superlattice oxide channel, which can offer a quasi-two-electron dimensional gas (q2DEG) near the heterointerface in the channel, has been attracting huge interest currently due to their high charge carrier mobility and potential for high-end electronics.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Various strategies have been suggested to improve the carrier mobility of oxide TFTs including controlled cation composition, − modified postdeposition processes, a crystallized channel, − and an advanced channel architecture. − Among them, the bandgap-engineering concept of a multilayer heterojunction or superlattice oxide channel, which can offer a quasi-two-electron dimensional gas (q2DEG) near the heterointerface in the channel, has been attracting huge interest currently due to their high charge carrier mobility and potential for high-end electronics. − First, the 2DEG system was mainly employed in III–V semiconductors (e.g., AlGaAs/GaAs, AlGaN/GaN) because it provides a high electron mobility at the heterointerface. , This effect is based on the spatial separation between free electrons and the positive donor center. Thus, free electrons that are confined along the vertical direction to the heterointerface by energy band bending can easily flow parallel to the heterointerface.…”

Section: Introductionmentioning

confidence: 99%

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High-Performance Indium-Based Oxide Transistors with Multiple Channels Through Nanolaminate Structure Fabricated by Plasma-Enhanced Atomic Layer Deposition

Cho

Choi

Kim

et al. 2023

ACS Appl. Mater. Interfaces

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An atomic-layer-deposited oxide nanolaminate (NL) structure with 3 dyads where a single dyad consists of a 2-nm-thick confinement layer (CL) (In 0.84 Ga 0.16 O or In 0.75 Zn 0.25 O), and a barrier layer (BL) (Ga 2 O 3 ) was designed to obtain superior electrical performance in thin-film transistors (TFTs). Within the oxide NL structure, multiple-channel formation was demonstrated by a pile-up of free charge carriers near CL/BL heterointerfaces in the form of the so-called quasi-two-dimensional electron gas (q2DEG), which leads to an outstanding carrier mobility (μ FE ) with band-like transport, steep gate swing (SS), and positive threshold voltage (V TH ) behavior. Furthermore, reduced trap densities in oxide NL compared to those of conventional oxide single-layer TFTs ensures excellent stabilities. The optimized device with the In 0.75 Zn 0.25 O/Ga 2 O 3 NL TFT showed remarkable electrical performance: μ FE of 77.1 ± 0.67 cm 2 /(V s), V TH of 0.70 ± 0.25 V, SS of 100 ± 10 mV/dec, and I ON/OFF of 8.9 × 10 9 with a low operation voltage range of ≤2 V and excellent stabilities (ΔV TH of +0.27, −0.55, and +0.04 V for PBTS, NBIS, and CCS, respectively). Based on in-depth analyses, the enhanced electrical performance is attributed to the presence of q2DEG formed at carefully engineered CL/BL heterointerfaces. Technological computer-aided design (TCAD) simulation was performed theoretically to confirm the formation of multiple channels in an oxide NL structure where the formation of a q2DEG was verified in the vicinity of CL/BL heterointerfaces. These results clearly demonstrate that introducing a heterojunction or NL structure concept into this atomic layer deposition (ALD)-derived oxide semiconductor system is a very effective strategy to boost the carrier-transporting properties and improve the photobias stability in the resulting TFTs.

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Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High-Performance Indium-Based Oxide Transistors with Multiple Channels Through Nanolaminate Structure Fabricated by Plasma-Enhanced Atomic Layer Deposition

Cho

Choi

Kim

et al. 2023

ACS Appl. Mater. Interfaces

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“…There have been many studies on enhancing the carrier mobility of oxide TFTs using various strategies, such as tailoring the cation composition profile, 11−17 crystallizing the oxide channel layer, 18−26 introducing postdeposition treatments, 27,28 and adopting a bilayer, multiple channel structure with an advanced architecture. 29−48 Among them, the oxide TFTs with a metal composition-based heterojunction channel structure have recently been highlighted to improve the carrier mobility of devices without reduced reliability.…”

Section: Introductionmentioning

confidence: 99%

“…There have been many studies on enhancing the carrier mobility of oxide TFTs using various strategies, such as tailoring the cation composition profile, − crystallizing the oxide channel layer, − introducing postdeposition treatments, , and adopting a bilayer, multiple channel structure with an advanced architecture. − Among them, the oxide TFTs with a metal composition-based heterojunction channel structure have recently been highlighted to improve the carrier mobility of devices without reduced reliability. − This notable strategy was proposed on the basis of Fermi energy level ( E F ) engineering in the channels. The concept of a modulation-doped heterojunction channel was first implemented in high-electron-mobility transistors (HEMTs) with an AlGaN/GaN active stack.…”

Section: Introductionmentioning

confidence: 99%

Comparative Study of Atomic Layer Deposited Indium-Based Oxide Transistors with a Fermi Energy Level-Engineered Heterojunction Structure Channel through a Cation Combinatorial Approach

Cho¹,

Choi²,

Jeong³

2022

ACS Appl. Mater. Interfaces

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Amorphous indium–gallium–zinc oxide (a-IGZO) has become a standard channel ingredient of switching/driving transistors in active-matrix organic light-emitting diode (AMOLED) televisions. However, mobile AMOLED displays with a high pixel density (≥500 pixels per inch) and good form factor do not often employ a-IGZO transistors due to their modest mobility (10–20 cm2/(V s)). Hybrid low-temperature polycrystalline silicon and oxide transistor (LTPO) technology is being adapted in high-end mobile AMOLED devices due to its ultralow power consumption and excellent current drivability. The critical issues of LTPO (including a complicated structure and high fabrication costs) require a search for alternative all-oxide thin-film transistors (TFTs) with low-cost processability and simple device architecture. The atomic layer deposition (ALD) method is a promising route for high-performance all-oxide TFTs due to its unique features, such as in situ cation composition tailoring ability, precise nanoscale thickness controllability, and excellent step coverage. Here, we report an in-depth comparative investigation of TFTs with indium–gallium oxide (IGO)/gallium–zinc oxide (GZO) and indium–zinc oxide (IZO)/GZO heterojunction stacks using an ALD method. IGO and IZO layers with different compositions were tested as a confinement layer (CL), whereas the GZO layer was used as a barrier layer (BL). Optimal IGO/GZO and IZO/GZO channels were carefully designed on the basis of their energy band properties, where the formation of a quasi-two-dimensional electron gas (q2DEG) near the CL/BL interface is realized by rational design of the band gaps and work-functions of the IGO, IZO, and GZO thin films. To verify the effect of q2DEG formation, the device performances and stabilities of TFTs with CL/BL oxide heterojunction stacks were examined and compared to those of TFTs with a single CL layer. The optimized device with the In0.75Zn0.25O/Ga0.80Zn0.20O stack showed remarkable electrical performance: μFE of 76.7 ± 0.51 cm2/(V s), V TH of −0.37 ± 0.19 V, SS of 0.13 ± 0.01 V/dec, and I ON/OFF of 2.5 × 1010 with low operation voltage range of ≥2 V and excellent stabilities (ΔV TH of +0.35, −0.67, and +0.08 V for PBTS, NBIS, and CCS, respectively). This study suggests the feasibility of using high-performance ALD-derived oxide TFTs (which can compete with the performance of LTPO transistors) for high-end mobile AMOLED displays.

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“…The a-IGZO TFTs are widely used for backplane technology in large-area displays because of their high uniformity between TFTs compared to amorphous silicon (a-Si) and low-temperature polycrystalline silicon (LTPS) TFTs. It is possible to realize low power consumption due to a low off-current characteristic [7]. However, the threshold voltage (Vth) of the a-IGZO TFTs becomes a negative value when a-IGZO TFTs are operated in depletion mode.…”

Section: Introductionmentioning

confidence: 99%

P‐73: Student Poster: MicroLED Pixel Circuit Based on Metal Oxide Thin‐Film Transistor with Progressive Emission Method Using Pulse Width Modulation

Jung

Hong

Ahn

et al. 2022

Symp Digest of Tech Papers

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High-Mobility Amorphous InGaZnO Thin-Film Transistors With Nitrogen Introduced via Low-Temperature Annealing

Cited by 16 publications

References 34 publications

High-Performance Indium-Based Oxide Transistors with Multiple Channels Through Nanolaminate Structure Fabricated by Plasma-Enhanced Atomic Layer Deposition

High-Performance Indium-Based Oxide Transistors with Multiple Channels Through Nanolaminate Structure Fabricated by Plasma-Enhanced Atomic Layer Deposition

Comparative Study of Atomic Layer Deposited Indium-Based Oxide Transistors with a Fermi Energy Level-Engineered Heterojunction Structure Channel through a Cation Combinatorial Approach

P‐73: Student Poster: MicroLED Pixel Circuit Based on Metal Oxide Thin‐Film Transistor with Progressive Emission Method Using Pulse Width Modulation

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