High Mobility Graphene on EVA/PET

Khan, Munis; Indykiewicz, Kornelia; Tam, Pui Lam; Yurgens, A.

doi:10.3390/nano12030331

Cited by 13 publications

(4 citation statements)

References 28 publications

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“…9 a. A portion of graphene is transferred to polyethylene-terephthalate (PET) through direct lamination followed by copper etching for surface analysis, Raman characterization, and mobility test 30 . We have fabricated the contact to graphene in a two-step and cost-effective maskless photolithographic process using Microlight 3D smart print.…”

Section: Methodsmentioning

confidence: 99%

Pure edge-contact devices on single-layer-CVD-graphene integrated into a single chip

Behera

2023

Sci Rep

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We present a simple and cost-effective fabrication technique for on-chip integration of pure edge contact two-terminal (2T) and Graphene field effect transistor (GFET) devices with low contact resistance and nonlinear characteristics based on single-layer chemical-vapor-deposited (CVD) graphene. We use a smart print-based mask projection technique with a 10X magnification objective lens for maskless lithography followed by thermal evaporation of the contact material Cr-Pd-Au through three different angles (90° and ± 45°) using a customized inclined-angle sample-holder to control the angle during normal incidence evaporation for edge-contact to graphene. Our fabrication technique, graphene quality, and contact geometry enable pure metal contact to 2D single-layer graphene allowing electron transport through the 1D atomic edge of graphene. Our devices show some signatures of edge contact to graphene in terms of very low contact resistance of 23.5 Ω, the sheet resistance of 11.5 Ω, and sharp nonlinear voltage-current characteristics (VCC) which are highly sensitive to the bias voltage. This study may find application in future graphene-integrated chip-scale passive or active low-power electronic devices.

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Section: Methodsmentioning

confidence: 99%

Pure edge-contact devices on single-layer-CVD-graphene integrated into a single chip

Behera

2023

Sci Rep

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“…In the original publication [ 1 ], the funder “Nordic Programme for Interdisciplinary Research”, “105121” to “Munis Khan and August Yurgens” was not included. The corrected Funding appears below.…”

Section: Additional Fundingmentioning

confidence: 99%

Correction: Khan et al. High Mobility Graphene on EVA/PET. Nanomaterials 2022, 12, 331

et al. 2022

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“…GFETs with a top gate were fabricated by first laminating graphene on copper onto EVA/PET foils [54]. Then, graphene was patterned, and Parylene N was deposited on the etched Hall bar structure.…”

Section: Introductionmentioning

confidence: 99%

High mobility graphene field effect transistors on flexible EVA/PET foils

Khan,

Ji,

Zhou

et al. 2024

2D Mater.

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Monolayer graphene is a promising material for a wide range of applications, including sensors, optoelectronics, antennas, EMR shielding, flexible electronics, and conducting electrodes. Chemical vapor deposition (CVD) of carbon atoms on a metal catalyst is the most scalable and cost-efficient method for synthesizing high-quality, large-area monolayer graphene. The usual method of transferring the CVD graphene from the catalyst to a target substrate involves a polymer carrier which is dissolved after the transfer process is completed. Due to often unavoidable damage to graphene, as well as contamination and residues, carrier mobilities are typically 1 000 − 3 000 cm^2/(V s), unless complex and elaborate measures are taken. Here, we report on a simple scalable fabrication method for flexible graphene field-effect transistors that eliminates the polymer interim carrier, by laminating the graphene directly onto office lamination foils, removing the catalyst, and depositing Parylene N as a gate dielectric and encapsulation layer. The fabricated transistors show field and Hall-effect mobilities of 7 000 − 10 000 cm^2/(V s) with a residual charge-carrier density of 2 × 10^11 1/cm^2 at room temperature. We further validate the material quality by terahertz time domain spectroscopy (THz-TDS) and observation of the quantum Hall effect at low temperatures in a moderate magnetic field of ∼ 5 T. The Parylene encapsulation provides long-term stability and protection against additional lithography steps, enabling vertical device integration in multilayer electronics on a flexible platform.

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High Mobility Graphene on EVA/PET

Cited by 13 publications

References 28 publications

Pure edge-contact devices on single-layer-CVD-graphene integrated into a single chip

Pure edge-contact devices on single-layer-CVD-graphene integrated into a single chip

Correction: Khan et al. High Mobility Graphene on EVA/PET. Nanomaterials 2022, 12, 331

High mobility graphene field effect transistors on flexible EVA/PET foils

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