2011
DOI: 10.1016/j.orgel.2010.09.023
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High-mobility polymer space–charge-limited transistor with grid-induced crystallinity

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Cited by 19 publications
(20 citation statements)
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“…Previously, we also successfully demonstrated a vertical-channel solution-processed organic transistor, named space-charge-limited transistor (SCLT), to have promising transistor characteristics. Improving polymer chain ordering by using solvent annealing or self-assembled monolayer treatment, an output current high enough to drive organic light-emitting diodes (OLEDs) (12-50 mA/cm 2 ) was obtained at a low operation voltage (< 2 V) [3], [4]. Using solution-processed transistors to drive solution-processed OLEDs [5] raphy used in our previous results is not compatible with existing commercialized tools.…”
Section: Introductionmentioning
confidence: 87%
See 1 more Smart Citation
“…Previously, we also successfully demonstrated a vertical-channel solution-processed organic transistor, named space-charge-limited transistor (SCLT), to have promising transistor characteristics. Improving polymer chain ordering by using solvent annealing or self-assembled monolayer treatment, an output current high enough to drive organic light-emitting diodes (OLEDs) (12-50 mA/cm 2 ) was obtained at a low operation voltage (< 2 V) [3], [4]. Using solution-processed transistors to drive solution-processed OLEDs [5] raphy used in our previous results is not compatible with existing commercialized tools.…”
Section: Introductionmentioning
confidence: 87%
“…Using solution-processed transistors to drive solution-processed OLEDs [5] raphy used in our previous results is not compatible with existing commercialized tools. More importantly, the nanosphere accumulation causes leakage current through large holes [3]. It is thus difficult to have uniform leakage control when nanosphere accumulation is randomly distributed.…”
Section: Introductionmentioning
confidence: 99%
“…The colloidal lithography was then employed to make the base electrode in SCLT with a hope of its potential mass production. However, colloidal lithography used in our previous work might not be compatible with existing commercialized process tools, and even worse the inevitable random accumulation of nanospheres during the process could incur large holes on the base electrode of SCLT, causing leakage current and made it difficult to have uniform leakage control [3]. A solution to completely removing such accumulation was to use nano-imprint lithography (NIL) of 0.35 mA/cm 2 and an ON/OFF current ratio of around 3000 at 1.8 V [5].…”
Section: Introductionmentioning
confidence: 99%
“…Since the high operation voltage caused by long channel length of the conventional transistor would bring about high power consumption, the organic transistors with vertical channels were introduced to lower down the operation voltage [2]. In the previous work, we reported that a vertical-channel solution-processed organic transistor, named space-charge-limited transistor (SCLT), showed promising transistor characteristics such as higher output current (>10 mA/cm 2 ) at 2 V operation voltage [3,4]. As shown in Fig.…”
Section: Introductionmentioning
confidence: 99%
“…In this way the non-uniform IPA drying by the pouring over horizontal substrate is avoided and the good non-closed packed distribution of PS spheres are achieved for 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 13 . Here it was demonstrated for the first time that the non-close-packed PS nanosphere layer can be achieved in an area of 18 cm × 25 cm above a rigid glass by the blade-coating deposition process.…”
mentioning
confidence: 99%