High mobility solution processed MoS2 thin film transistors

Gomes, Francis Oliver Vinay; Pokle, Anuj; Marinkovic, Marko; Balster, Torsten; Anselmann, Ralf; Nicolosi, Valeria; Wagner, Veit

doi:10.1016/j.sse.2019.05.011

Cited by 20 publications

(16 citation statements)

References 62 publications

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“…Post‐annealing treatment: annealing temperature provides energy to the NbS 2 atoms which facilitate the coalescence, resulting in the larger size of NbS 2 particles starts forming. As the temperature going to increase, new Nb‐S bonds have been created between adjacent particles and different recrystallized obtained, such effects were already reported in others TMDs 46,47 . After that evaporation was started from the top layers of NbS 2 flakes, Nb and S atoms are going to start and thinning of the individual particle leads.…”

Section: Mechanism Of Structural Changes By Post‐annealing and Plasmasupporting

confidence: 51%

“…As the temperature going to increase, new Nb-S bonds have been created between adjacent particles and different recrystallized obtained, such effects were already reported in others TMDs. 46,47 After that evaporation was started from the top layers of NbS 2 flakes, Nb and S atoms are going to start and thinning of the individual particle leads. This thermal thinning of NbS 2 flakes can be understood by the layer-by-layer evaporation model, which assumes that the atoms were evaporated from the top surface at high temperatures.…”

Section: Mechanism Of Structural Changes By Post-annealing and Plasmentioning

confidence: 99%

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Unveiling active sites by structural tailoring of two‐dimensional niobium disulfide for improved electrocatalytic hydrogen evolution reaction

et al. 2020

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Here we report, unveiling the active sites for improved electrocatalytic hydrogen evolution reaction (HER) by structural tailoring of Niobium Disulfide (NbS 2). NbS 2 synthesized by chemical vapor deposition method, structural deformation is carried out by post-argon plasma and annealing treatment. Plasma-treated (P.T) NbS 2 exhibits layer-by-layer stacked (≈250 nm) long and (≈200 nm) wide flakes, which show more edge sites and demonstrates low hydrogen evolution activity. Annealed NbS 2 flakes are enlarged in size (≈1 μm) having more surface area which shows additional active basal plane sites and demonstrate remarkable HER performance at 10 mA cm −2. As the thickness of NbS 2 is reduced, more basal planes are exposed hence improved HER activity was achieved. This enhanced electrocatalytic change demonstrates that the basal planes are the main active sites for HER in NbS.

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Section: Mechanism Of Structural Changes By Post‐annealing and Plasmasupporting

confidence: 51%

Section: Mechanism Of Structural Changes By Post-annealing and Plasmentioning

confidence: 99%

Unveiling active sites by structural tailoring of two‐dimensional niobium disulfide for improved electrocatalytic hydrogen evolution reaction

et al. 2020

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“…The bottom-gate, top-contact configuration used in this work involves the deposition of the organic semiconductor layer prior to the evaporation of contact electrodes, which does not allow the utilization of PFBT treatment without damaging the active layer. Hexamethyldisilazane (HMDS) treatment [ 58 ] can also be applied to the substrate to passivate the hydrophilic silanol groups, which would otherwise serve as charge trap centers and undermine the electrical performance of the TIPS pentacene/PFS based OTFTs. Therefore, the mobility reported in this work can be significantly enhanced by utilizing and optimizing these factors as mentioned above.…”

Section: Resultsmentioning

confidence: 99%

Polyferrocenylsilane Semicrystalline Polymer Additive for Solution-Processed p-Channel Organic Thin Film Transistors

Zhang

Asare‐Yeboah

et al. 2021

Polymers

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In this study, we demonstrated for the first time that a metal-containing semicrystalline polymer was used as an additive to mediate the thin film morphology of solution-grown, small-molecule organic semiconductors. By mixing polyferrocenylsilane (PFS) with an extensively-studied organic semiconductor 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene), PFS as a semicrystalline polymer independently forms nucleation and crystallization while simultaneously ameliorating diffusivity of the blend system and tuning the surface energies as a result of its partially amorphous property. We discovered that the resultant blend film exhibited a 6-fold reduction in crystal misorientation angle and a 3-fold enlargement in average grain width. Enhanced crystal orientation considerably reduces mobility variation, while minimized defects and trap centers located at grain boundaries lessen the adverse impact on the charge transport. Consequently, bottom-gate, top-contact organic thin film transistors (OTFTs) based on the TIPS pentacene/PFS mixture yielded a 40% increase in performance consistency (represented by the ratio of average mobility to the standard deviation of mobility). The PFS semicrystalline polymer-controlled crystallization can be used to regulate the thin film morphology of other high-performance organic semiconductors and shed light on applications in organic electronic devices.

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“…However, this method needed a two-step thermolysis with an expensive sapphire substrate and was not totally applicable to large-area preparation. Another approach was to use a mixed solvent system to obtain MoS 2 layers by a solution process [7][8][9] , where a two-step annealing process and sulfurization or pulsed laser annealing were also required.…”

Section: Introductionmentioning

confidence: 99%

Bottom-up water-based solution synthesis for a large MoS2 atomic layer for thin-film transistor applications

2021

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A bottom-up water-based solution-process method was developed for atomic layered MoS2 with a one-step annealing process and no sulfurization. The chosen MoS2 precursor is water soluble and was carefully formulated to obtain good coating properties on a silicon substrate. The coated precursor was annealed in a furnace one time to crystallize it. This method can obtain a large and uniform atomic layer of 2D MoS2 with 2H lattice structure. The number of atomic layers (4–7) was controlled through the precursor concentrations and showed good uniformity, which was confirmed by STEM and AFM. Four types of thin-film transistors (TFTs) were prepared from the solution-processed MoS2 on Al2O3 and SiO2 dielectric with either thermal evaporated Al or printed Ag source and drain electrodes. The best result shows an improved mobility of 8.5 cm2 V−1 s−1 and a reasonable on–off ratio of about 1.0 × 105 with solid output saturation.

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High mobility solution processed MoS2 thin film transistors

Cited by 20 publications

References 62 publications

Unveiling active sites by structural tailoring of two‐dimensional niobium disulfide for improved electrocatalytic hydrogen evolution reaction

Unveiling active sites by structural tailoring of two‐dimensional niobium disulfide for improved electrocatalytic hydrogen evolution reaction

Polyferrocenylsilane Semicrystalline Polymer Additive for Solution-Processed p-Channel Organic Thin Film Transistors

Bottom-up water-based solution synthesis for a large MoS2 atomic layer for thin-film transistor applications

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