High-mobility transparent conducting Mo-doped In2O3 thin films by pulsed laser deposition

Abstract

High near-infrared transparency and carrier mobility of Mo doped In 2 O 3 thin films for optoelectronics applications

Tungsten-doped In2O3 transparent conductive films with high transmittance in near-infrared region

“…According to the Drude model, the increase of the transparency window to the NIR wavelength region without compromising the conductivity can only be obtained by increasing the mobility with decreasing carrier density [3]. In recent years, TCO of Mo- [4][5][6][7], Ti- [8,9], Zr [3,10]-doped In 2 O 3 thin films with high-NIR transparency have been reported. The films exhibit high mobility (450 cm 2 V À1 s À1 ) and relatively low carrier concentration at the order of 10 20 cm À3 compared with that of ITO in the order of 10 21 cm À3 .…”

Phase stability, electronic structure, and optical properties of indium oxide polytypes

“…ITO is widely used for liquid crystal displays and solar cells because of its low electrical resistivity, transparency in the visible spectrum of the solar radiation, compatibility with the patterning processes, and possibility to fabricate at relatively lower temperatures compared to other TCO materials like SnO 2 and ZnO. Recently, high-mobility In 2 O 3 thin film on glass have been identified by doping with transition metals such as Mo 13 and Ti. 14 Heteroepitaxial In 2 O 3 layers with high carrier mobility of 110 cm 2 /(V s) and carrier concentration of 6.6×10 18 cm −3 have been obtained by pulsed-laser-deposition method.…”

Effects of molybdenum doping and thermal annealing on the physical properties of amorphous In–Zn–O films

“…Sn-doped In 2 O 3 films (ITO). It was found that, for In 2 O 3 films, the Mo doping drastically enhances the carrier mobility with more than twice the value of ITO films [4,5] but not degrades their optical transmission. Firstprinciple band structure calculations on Mo-doped In 2 O 3 suggest that magnetic exchange interactions splitting the Mo d states result in the smaller effective mass of carriers and hence larger mobility compared to ITO [6].…”