2008
DOI: 10.1016/j.jcrysgro.2008.05.012
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Tungsten-doped In2O3 transparent conductive films with high transmittance in near-infrared region

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Cited by 52 publications
(25 citation statements)
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“…This result is similar to that of IMO films [12] and agrees with the crystalline temperature of roughly up to 150°C for In 2 O 3 -based transparent conductive thin films in similar processes. For comparison, typical polycrystalline IWO thin films prepared at 320°C in our previous work [10] is also shown in Fig. 1, with each diffraction peak identified being consistent with that of bixbyite-type In 2 O 3 .…”
Section: Morphology and Structural Propertiesmentioning
confidence: 61%
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“…This result is similar to that of IMO films [12] and agrees with the crystalline temperature of roughly up to 150°C for In 2 O 3 -based transparent conductive thin films in similar processes. For comparison, typical polycrystalline IWO thin films prepared at 320°C in our previous work [10] is also shown in Fig. 1, with each diffraction peak identified being consistent with that of bixbyite-type In 2 O 3 .…”
Section: Morphology and Structural Propertiesmentioning
confidence: 61%
“…Compared with formerly reported polycrystalline IWO films [10], the resistivity of amorphous IWO films is a little higher, but still relatively low compared with ITO films deposited at room temperature [15,16]. The carrier mobility is lower than crystalline films owing to the long-range disorder, whereas, the value is high among amorphous TCOs [16,17].…”
Section: Electrical Propertiesmentioning
confidence: 62%
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“…Zhang et al suggested that W 6+ substitutes for In 3+ sites, thereby producing three excess electrons in the IWO films [22]. Due to the effective activation of W dopants, the carrier concentration in the IWO also increased with increasing RTA temperature.…”
Section: Resultsmentioning
confidence: 99%