High mobility ultrathin ZnO p–n homojunction modulated by Zn _0.85 Mg _0.15 O quantum barriers

Abstract

The adding of ZnMgO asymmetric double barriers (ADB) in p-ZnO: (Li, N)/n-ZnO homojunction affects the p-n junction device performance prominently. Two different homojunctions are fabricated on Si (100) substrates by pulsed laser deposition; one is the traditional p-ZnO: (Li, N)/n-ZnO homojunction with different thicknesses named as S 1 (250 nm) and S 2 (500 nm), the other is the one with ADB embedded in the n-layer named as Q (265 nm). From the photoluminescence spectra, defect luminescence present in the S-series devices is effectively limited in the Q device. The current-voltage curve of the Q device shows Zener-diode rectification property because the two-dimensional electron gas tunnels through the narrow ZnMgO barrier under a reverse bias, thus decreasing the working p-n homojunction thickness from 500 nm to 265 nm. The ADB-modified homojunction shows higher carrier mobility in the Q device. The electroluminescence of the ZnO homojunction is improved in Q compared to S 2 , because the holes in p-type ZnO (Li, N) can cross the wide ZnMgO barrier under a forward bias voltage into the ZnO quantum well. Therefore, electron-hole recombination occurs in the narrow bandgap of n-type ZnO, creating an ultraviolet light-emitting diode using the ZnO homojunction.

ITO:n‐ZnO:p‐NiO and ITO:n‐ZnO:p‐NZO thin films: Study of crystalline structures, surface statistical metrics, and optical properties

“…Figure 21 shows a diagram for NiO:ZnO heterojunction, which has ohmic behavior. This result was investigated by Yang et al (2018). Thus, p-n junction with low-thickness about 150 nm, they obtained junctions with ohmic behavior, but with increasing thickness, diode behavior was observed.…”

Epitaxial growth of antimony nanofilms on HOPG and thermal desorption to control the film thickness*

“…The ARPES measurements indicated that the intrinsic electronic states of these films have been affected by the strong inter-facial interactions between the film and substrate. [32][33][34][35][36][37][38][39] It is an appropriate method to fabricate these Sb nanofilms by the epitaxial growth on the inert substrates for investigating their thickness-dependent intrinsic properties. [40][41][42] In this article, we reported the successful fabrication of the Sb nanofilms of different thicknesses by a combination of epitaxial growth and controllable thermal desorption on the inert highly oriented pyrolytic graphite (HOPG) substrates.…”