High-NA EUV lithography exposure tool progress

Schoot, Jan van; Setten, Eelco van; Troost, Kars; Bornebroek, Frank; Ballegoij, Rob van; Lok, Sjoerd; Stoeldraijer, Judon; Finders, Jo; Graeupner, Paul; Zimmermann, J.; Kuerz, Peter; Pieters, Marco; Kaiser, Winfried

doi:10.1117/12.2515205

Cited by 19 publications

(11 citation statements)

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“…In the optical design of 0.55NA imaging system, a physical pupil obscuration with a approximated radius of σ=0.21 is used, which means 0.55NA optical system allows to increase image contrast by partial dark-field imaging. 13,14 To study the obscuration impact on lithographic imaging performance, we re-run the SMO jobs of binary mask at metal pitch 20nm with a minimum σ=0.21, to avoid putting source points inside the pupil obscuration during source optimization. The impact on the NILS of LS at pitch 20nm is shown in Fig.…”

Section: Appendix a Pupil Obscuration Impact Discussionmentioning

confidence: 99%

Feasibility of logic metal scaling with 0.55NA EUV single patterning

Xu¹,

Tan

Philipsen³

et al. 2023

Optical and EUV Nanolithography XXXVI

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By adopting the new design of the optics within the scanner, high-NA (0.55NA) EUV lithography enables higher resolution, which will push the EUV single patterning down to pitch 16nm (k1=0.34, the same k1 value as pitch 28nm for 0.33NA EUV single patterning). Therefore, 0.55NA EUVL is projected to print the most critical features of 2nm node (and beyond) logic chips with less patterning steps than 0.33NA EUVL, and is highly expected by the industry. Besides, novel low-n low-k absorber attenuated phase shift masks (low-n attPSMs) are commercially available recently, which have shown substantial imaging, as well as patterning performance improvements both in simulations and experiments. Thus, in this paper, we evaluate the feasibility and limits of logic metal scaling with 0.55NA EUV single pattering using source mask optimization tool, both binary and low-n attPSMs are used to pattern an imec N3 (pitch 28nm, foundry N2 equivalent) random logic metal design and the linear scaled versions (down to pitch 18nm). The impact of design orientations (horizontal vs. vertical) and mask tones (dark field vs. bright field) on patterning fidelity and overall process window is evaluated.

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Section: Appendix a Pupil Obscuration Impact Discussionmentioning

confidence: 99%

Feasibility of logic metal scaling with 0.55NA EUV single patterning

Xu¹,

Tan

Philipsen³

et al. 2023

Optical and EUV Nanolithography XXXVI

View full text Add to dashboard Cite

show abstract

“…EL of 26%. As comparison, high-NA EUV EXE:5000 systems are expected to have a focus range specification of 20-30 nm 12,13 . Also, the Mask Error Enhancement Factor (MEEF) is well under control, below 2.…”

Section: Organic Ptd Carmentioning

confidence: 99%

Depth of focus in high-NA EUV lithography: a simulation study

Burov¹,

Pret²,

Gronheid

2022

Photomask Technology 2022

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High-NA EUV lithography tools are projected to be deployed in HVM by 2025/2026, with the introduction of the N1.4 node. This should allow single-exposure EUVL at 30 nm pitch and below and reduce cost and complexity. One of the main challenges in process control will be the budgeting of depth of focus. With Rayleigh’s equations in mind and considering a relatively thick photoresist needed for etching purposes, an overall focus window of less than 40 nm is expected for high-NA EUV exposures. This is concerning, considering that after almost two decades at roughly constant depth of focus (~100 nm for 1.35 NA ArF immersion and 0.33 NA EUV), we may potentially be dealing with 2-3X lower usable focus range. On top of that - and differently from the DUV case - increasing NA in EUVL exacerbates the impact of complex 3D mask effects which, in a non-telecentric tool with an oblique incidence at the mask, negatively impact best focus shifts across mask pitch and feature CD. In this paper, we look at how to mitigate lines/spaces depth of focus loss across pitch by exploring source, mask pattern and mask stack optimization. Moreover, we compare the best strategy between bright/dark exposures, mask transmissivity, and phase-shifting combined with assist features, resist thickness, and feature orientation. Finally, we compare the optical performance with defect-aware process windows at 0.33 vs. 0.55 NA based upon stochastic resist calibration for generic positive-tone organic CAR, and negative-tone inorganic platforms.

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“…ASML and our partner Carl Zeiss are developing a high-NA EUV exposure system with NA = 0.55 along with tightened specifications that allow continued scaling in semiconductor manufacturing beyond the next decade [28][29][30]. The goal of this effort is to enable EUV single-patterning at a minimum pitch less than 20 nm.…”

Section: Future Euv Lithography Systemsmentioning

confidence: 99%

EUV Lithography Technology for High-volume Production of Semiconductor Devices

Miyazaki¹,

Yen

2019

J. Photopol. Sci. Technol.

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After years of efforts, extreme-ultraviolet (EUV) lithography reached a significant milestone in 2018: readiness for high-volume production of advanced semiconductor devices. A EUV source power of 250 W has been realized, providing a tool throughput capability exceeding 140 wafers per hour at a dose of 20 mJ/cm 2. The full-wafer critical dimension (CD) uniformity is now less than 0.5 nm for multiple systems and matched-machine overlay is at 1.1 nm. These imaging and overlay performances meet the production requirements for the 5-nm node logic and 16-nm dynamic random access memory (DRAM) devices. Meanwhile, ASML continues to improve the performance of EUV exposure tools to obtain higher throughput, better image quality, and tighter overlay specifications, thereby further enhancing productivity and capability. Further improvements in resist and mask materials are required to extend EUV single-patterning to the low-k1 regime. Finally, ASML has begun to develop an EUV exposure system with a numerical aperture (NA) of 0.55 to enable continued scaling in semiconductor manufacturing beyond the next decade.

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High-NA EUV lithography exposure tool progress

Cited by 19 publications

References 0 publications

Feasibility of logic metal scaling with 0.55NA EUV single patterning

Feasibility of logic metal scaling with 0.55NA EUV single patterning

Depth of focus in high-NA EUV lithography: a simulation study

EUV Lithography Technology for High-volume Production of Semiconductor Devices

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