High-numerical-aperture 193-nm exposure tool

Abstract

As the semiconductor industry accelerates the pace of change, a shift in exposure wavelength from 248 nm to 193 nm becomes inevitable. Correspondingly, the change to a shorter wavelength and the desire to maintain productivity, necessitates a fundamental reassessment of system design approach. Evaluation of resolution and k-factor for a lithographic tool operating at 193 nm and 0.75 numerical aperture indicates that 130 nm node production will be manageable with binary mask, and that performance consistent with 100 nm node requirements and potentially beyond will be achievable with the use of advanced lithographic techniques. This paper reviews the design, system performance analysis and early results for a full-field catadioptric lithography tool operating at numerical apertures up to 0.75 NA.

157-nm system test for high-NA lithographic lens systems

“…Our testing scheme has been optimized for use with randomly or unpolarized light source that the lens will ultimately be used with. There are lens designs optimized for use with polarized light 13,14 . Testing of these systems will require an approach not discussed here.…”