High on/off-ratio P-type oxide-based transistors integrated onto Cu-interconnects for on-chip high/low voltage-bridging BEOL-CMOS I/Os

Sunamura, H.; Kaneko, K.; Furutake, N.; Saito, Shinobu; Narihiro, M.; Ikarashi, Nobuyuki; Hane, M.; Hayashi, Y.

doi:10.1109/iedm.2012.6479070

Cited by 11 publications

(5 citation statements)

References 3 publications

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“…2. [10][11][12][13][14][15] As written in the conference proceeding, ability of high voltage operation with small feature size is expected as an interface bridge for signal conversion between CMOS core-logics with lowvoltages and peripheral devices driven with high-voltages. A p-type amorphous SnO TFT is developed as a complement component to n-type IGZO TFTs.…”

Section: Power Devicesmentioning

confidence: 99%

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Emerging applications using metal-oxide semiconductor thin-film devices

Kimura

2019

Jpn. J. Appl. Phys.

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Metal-oxide semiconductors are widely used for thin-film transistors for flat-panel displays, but they do not seem to be limited to the conventional applications. In this review, emerging applications using metal-oxide semiconductor thin-film devices are reviewed, which may be novel killer applications in the future. First, the essential advantages are enumerated, and, next, based on the essential advantages, several proposals of emerging applications from many organizations are introduced. First, power devices using metal-oxide semiconductor thin-film devices are proposed, because they can be tolerant against high voltage, and the carrier mobility is high. Second, sensing devices are proposed, because the electrical characteristic can be sensitive to peripheral environment, and the thin-film devices can be fabricated on large areas with low cost. Third, thermoelectric devices are proposed, because the Seebeck coefficients can be improved, and the cost performance is the most important. Fourth, computing applications, including many kinds of related applications, are proposed, where various essential advantages are available each. Finally, neuromorphic systems are proposed, where the metal-oxide semiconductor thin-film devices have the potential possibility to be key components in neuromorphic systems for artificial intelligences, which are central concepts in smart societies.

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Section: Power Devicesmentioning

confidence: 99%

“…2. (Color online) BEOL transistor with an n-type IGZO film and ptype SnO film for on-chip high voltage I/Os in standard CMOS LSIs 13).…”

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confidence: 99%

Emerging applications using metal-oxide semiconductor thin-film devices

Kimura

2019

Jpn. J. Appl. Phys.

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“…Indeed, the integration of several memory circuits on top of CMOS logic circuit has been demonstrated with the improvement in terms of speed, power, and performance . This monolithic heterogeneous integration, however, requires a low-temperature process (≤400 °C) because (i) a high temperature negatively affects the performance of underlying CMOS logic devices and (ii) 3D stacking of nonvolatile memory, selector, and driver array favors the low-temperature process. , The p-type oxide semiconductor as well as n-type IGZO can be used as the essential ingredient for the memory selector and driver due to their low-temperature compatibility and good processability. , However, in the case of p-type oxide semiconductors, the valence band (VB) edge acts as a hole conduction path that is mainly formed of anisotropic and localized oxygen 2p orbitals, thereby resulting in a large hole effective mass ( m h *) and poor transport characteristics. Moreover, the p-type dopability is limited by the high formation energy of point defects, such as cation vacancies, that create free holes.…”

Section: Introductionmentioning

confidence: 99%

Material Design of New p-Type Tin Oxyselenide Semiconductor through Valence Band Engineering and Its Device Application

Kim

Yoo

Youn

et al. 2019

ACS Appl. Mater. Interfaces

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This paper reports a new p-type tin oxyselenide (SnSeO), which was designed with the concept that the valence band edge from O 2p orbitals in the majority of metal oxides becomes delocalized by hybridizing Se 4p and Sn 5s orbitals. As the Se loading increased, the SnSeO film structures were transformed from tetragonal SnO to orthorhombic SnSe, which was accompanied by an increase in the amorphous phase portion and smooth morphologies. The SnSe0.56O0.44 film annealed at 300 °C exhibited the highest Hall mobility (μHall), 15.0 cm2 (V s)−1, and hole carrier density (n h), 1.2 × 1017 cm–3. The remarkable electrical performance was explained by the low hole effective mass, which was calculated by a first principle calculation. Indeed, the fabricated field-effect transistor (FET) with a p-channel SnSe0.56O0.44 film showed the high field-effect mobility of 5.9 cm2 (V s)−1 and an I ON/OFF ratio of 3 × 102. This work demonstrates that anion alloy-based hybridization provides a facile route to the realization of a high-performance p-channel FET and complementary devices.

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“…This shortcoming hinders the development of OS-based CMOS circuits. [10][11][12] To address this issue, several potential materials for realizing p-type devices, such as Cu 2 O, 13,14) Ag 2 O, 15,16) and SnO, [17][18][19][20] have been actively studied. Among them, SnO is the most attractive as its superior hole mobility performance has been demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Impact of thermal oxygen annealing on the properties of tin oxide films and characteristics of p-type thin-film transistors

Zhong

Lin

Liu

et al. 2015

Jpn. J. Appl. Phys.

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In this work, we study the properties of tin oxide films, which were annealed in oxygen ambient for various periods. The as-deposited tin oxides are tin-dominant and, from the Hall measurements, they are of the n-type with high electron concentrations (>1019 cm−3) and would change to the p-type when the oxygen annealing is sufficiently long. We have also found that changes in the structure and crystallinity of the channel layer can be clearly observed by X-ray diffraction analysis and optical microscopy. On the basis of the observations, a physical scheme is proposed to describe the evolution of the electrical performance of oxygen-annealed devices. A hole mobility of 3.24 cm2 V−1 s−1, a subthreshold swing of 0.43 V/dec, a threshold voltage of 1.4 V, and an on/off current ratio larger than 103 are obtained as the channel is transformed into SnO.

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High on/off-ratio P-type oxide-based transistors integrated onto Cu-interconnects for on-chip high/low voltage-bridging BEOL-CMOS I/Os

Cited by 11 publications

References 3 publications

Emerging applications using metal-oxide semiconductor thin-film devices

Emerging applications using metal-oxide semiconductor thin-film devices

Material Design of New p-Type Tin Oxyselenide Semiconductor through Valence Band Engineering and Its Device Application

Impact of thermal oxygen annealing on the properties of tin oxide films and characteristics of p-type thin-film transistors

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