High optical gain in InP-based quantum-dot material monolithically grown on silicon emitting at telecom wavelengths

Abstract

We describe the fabrication process and properties of an InP based quantum dot laser structure grown on a 5° off-cut silicon substrate. Several layers of quantum dot based dislocation filters embedded in GaAs and InP were used to minimize the defect density in the quantum dot active region which comprised eight emitting dot layers. The structure was analyzed using high resolution transmission electron microscopy, atomic force microscopy and photoluminescence. The epitaxial stack was used to fabricate optical amplifiers which exhibit electroluminescence spectra that are typical of conventional InAs quantum dot amplifiers grown on InP substrates. The amplifiers avail up to 20 dB of optical gain, which is equivalent to a modal gain of 46 cm-1.

Исследование квантовых ям InP/GaP, полученных методом газофазной эпитаксии

“…Ранее была показана возможность создания таких периодических структур InP/GaP на подложках GaAs [5,6] с возможностью варьирования ширины запрещенной зоны в диапазоне от 1.65 до 2 eV в зависимости от количества периодов и толщин слоев. Тем не менее на данный момент получение квантовых ям InP/GaP на подложках кремния актуально и является серьезным вызовом [7][8][9].…”

Study of InP/GaP quantum wells grown by vapor phase epitaxy

“…The possibility of fabrication of periodic InP/GaP structures of this kind on GaAs substrates [5,6] with the bandgap width varying from 1.65 to 2 eV depending on the number of periods and the layer thickness has been demonstrated earlier. However, the fabrication of InP/GaP quantum wells (QWs) on silicon substrates is currently a relevant topic and still presents a serious challenge [7][8][9].…”