High-output-power polarization-insensitive semiconductor optical amplifier

Photonic Integrated Semiconductor Optical Amplifier Switch Circuits

“…While bulk active regions offer the highest confinement, quantum wells (in reducing numbers) allow for an increase in distortion threshold with output saturation powers of order +15dBm and higher being reported (Borghesani et al, 2003;Morito et al, 2003). Quantum dot epitaxies allow even further reductions in optical overlap for the highest reported saturation powers (Akiyama et al, 2005).…”

“…The latter are tailored using epitaxially defined strain. A broad range of reports have demonstrated polarisation independent operation for both bulk (Emery et al, 1997;Dreyer et al, 2002;Morito et al, 2000;Kakitsuka et al, 2000;Morito et al, 2003;Morito et al, 2005) and quantum wells SOAs (Godefroy et al, 1995;Kelly et al, 1997;Ougazzadeu, 1995;Tiemeijer et al, 1996).…”

Wide-Band Steady-State Numerical Model and Parameter Extraction of a Tensile-Strained Bulk Semiconductor Optical Amplifier

“…It is assumed that the ratio of the TE and TM confinement factors is constant, although for small waveguide widths this assumption is no longer valid [5]. is the distance from the SOA input facet.…”

“…In this paper we take to be equal to that for GaAs. The active region axial deformation potential , spin orbit split off energy , optical matrix parameter , and Luttinger coefficients , and are obtained using the general interpolation expression (5) where is the parameter of interest.…”

“…It is often of interest in SOA design to determine the influence of the active region thickness on the device characteristics such as saturation output power. This would require detailed information on the dependence of the confinement factors on the active region thickness [5].…”