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Abstract-A wideband steady-state model and efficient numerical algorithm for a bulk InP-InGaAsP homogeneous buried ridge stripe semiconductor optical amplifier is described. The model is applicable over a wide range of operating regimes. The relationship between spontaneous emission and material gain is clarified. Simulations and comparisons with experiment are given which demonstrate the versatility of the model. Index Terms-Modeling, semiconductor optical amplifier.

Abstract-A wide-band steady-state model of a tensile-strained bulk InGaAsP semiconductor optical amplifier is described. An efficient numerical algorithm of the steady-state model and a parameter extraction algorithm based on the Levenberg-Marquardt method are described. The parameter extraction technique is used to determine the material Auger recombination coefficient, effective intraband lifetime, the average strain and molar fraction of Arsenic in the active region. Simulations and comparisons with experiment are given which demonstrate the accuracy and versatility of the model. Index Terms-Modeling, parameter extraction, semiconductor optical amplifier, tensile-strained bulk material.

Abstract-In this paper, we present a numerical model to study counter pulse propagation in semiconductor optical amplifiers. An improved finite-difference beam propagation method for solving the modified nonlinear Schrödinger equation is applied for the first time in the counterpropagation regime. In our model, group velocity dispersion, two-photon absorption, ultrafast nonlinear refraction, and the change in the gain peak wavelength with carrier density are included, which have not been considered simultaneously in previous counterpropagation models. The model is applied to demonstrate how a subpicosecond and picosecond probe pulse shape and spectrum can be modified by a counterpropagating pump pulse. Based on the results obtained by this model, while subpicosecond probe pulses can be compressed by in this scheme, their time-bandwidth product are also improved significantly. Furthermore, the effects of several parameters are analyzed to obtain the proper probe spectral peak shift using counterpropagating probe pulses. The accuracy and computational efficiency of the new scheme are assessed through numerical examples and are shown to be superior to previously published approaches.Index Terms-Counterpropagation, pulse shaping, semiconductor optical amplifier, ultrafast nonlinear effects.

An all-optical AND gate based on optically induced nonlinear polarization rotation of a probe light in a bulk semiconductor optical amplifier is realized at a bit rate of 2.5Gbit/s. By operating the AND gate in an up and inverted wavelength conversion scheme, the extinction ratio is improved by 8dB compared with previously published work.