Wideband semiconductor optical amplifier steady-state numerical model

Abstract

Abstract-A wideband steady-state model and efficient numerical algorithm for a bulk InP-InGaAsP homogeneous buried ridge stripe semiconductor optical amplifier is described. The model is applicable over a wide range of operating regimes. The relationship between spontaneous emission and material gain is clarified. Simulations and comparisons with experiment are given which demonstrate the versatility of the model. Index Terms-Modeling, semiconductor optical amplifier.

The λ-Characteristics of the Ring Laser Based on Non-Uniform SOA

“…Considering the ring structure of the SOA-RL, the algorithm segmentation method for the quasi-steady state SOA comes from M. J. Connelly [12], we will not discuss the algorithm itself.…”

High-Speed All-Optical Switches Based on Cascaded SOAs

“…In (1), e is the electron charge, and V is the volume of the active region in the SOA. The radiative and nonradiative recombination rate due to the limited carrier lifetime in the SOA, R(N) (Connelly, 2001), can be approached by,…”

“…In the case of the steady state, the RHS of (1)- (3) should equal to zero, which implies that the carrier densities in each section will keep unchanging if the input does not change. A numerical algorithm from (Connelly, 2001) is adopted here to give a good convergence. 2.…”

Wide-Band Steady-State Numerical Model and Parameter Extraction of a Tensile-Strained Bulk Semiconductor Optical Amplifier

“…The principle nonradiative recombination mechanism in SOAs is usually Auger recombination due to the high carrier densities usually encountered. The normalization factor , which accounts for the noise filtering introduced by the SOA resonances, is given by [13] …”