High PAE high reliability AlN/GaN double heterostructure

Medjdoub, Farid; Zégaoui, M.; Linge, Astrid; Grimbert, B.; Silvestri, Riccardo; Meneghini, Matteo; Meneghesso, G.; Zanoni, Enrico

doi:10.1016/j.sse.2015.05.009

Cited by 5 publications

(1 citation statement)

References 9 publications

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“…Currently, the most matured GaN HEMTs are based on a AlGaN/GaN heterostructure [ 6 , 7 , 8 , 9 , 10 ]. More recently, Al-rich ultrathin sub-10 nm barrier heterostructures have received much attention for millimeter-wave applications [ 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 ]. This is because they can deliver significantly higher 2DEG sheet carrier density compared to AlGaN/GaN HEMTs while offering the possibility to highly scale the epitaxial structure as needed when using short gate lengths [ 23 , 24 , 25 ].…”

Section: Introductionmentioning

confidence: 99%

Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier

et al. 2023

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In this paper, we report on an enhancement of mm-wave power performances with a vertically scaled AlN/GaN heterostructure. An AlGaN back barrier is introduced underneath a non-intentionally doped GaN channel layer, enabling the prevention of punch-through effects and related drain leakage current under a high electric field while using a moderate carbon concentration into the buffer. By carefully tuning the Al concentration into the back barrier layer, the optimized heterostructure offers a unique combination of electron confinement and low trapping effects up to high drain bias for a gate length as short as 100 nm. Consequently, pulsed (CW) Load-Pull measurements at 40 GHz revealed outstanding performances with a record power-added efficiency of 70% (66%) under high output power density at VDS = 20 V. These results demonstrate the interest of this approach for future millimeter-wave applications.

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