High performance 100 nm T-gate strained Si/Si/sub 0.6/Ge/sub 0.4/ n-MODFET

Aniel, F.; Enciso-Aguilar, M.; Giguerre, L.; Crozat, P.; Adde, R.; Mack, T.; Seiler, U.; Hackbarth, T.; Raynor, B.

doi:10.1109/isdrs.2001.984551

Cited by 3 publications

(3 citation statements)

References 4 publications

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“…The biaxial tensile strain introduces splitting of degenerate bands [1] which results, for both electrons and holes, in smaller in-plane conduction mass and reduced intervalley scattering thereby yielding improved carrier velocity. In the case of electrons this effect has been clearly shown from mobility measurement and calculation in SiGe-Si-SiGe quantum wells [2][3][4] and it has been used for designing high-performance MODFET with low noise figure and high cut-off and maximum oscillation frequencies [5][6]. Now efforts are made to transfer this advantage in CMOS technology on either bulk or insulating substrate [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

“…shown from mobility measurement and calculation in SiGe-Si-SiGe quantum wells [2][3][4] and it has been used for designing high-performance MODFET with low noise figure and high cut-off and maximum oscillation frequencies [5][6]. Now efforts are made to transfer this advantage in CMOS technology on either bulk or insulating substrate [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

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Electron effective mobility in strained-Si/Si1−xGex MOS devices using Monte Carlo simulation

Aubry-Fortuna

Dollfus

Galdin‐Retailleau

2005

Solid-State Electronics

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Based on Monte Carlo simulation, we report the study of the inversion layer mobility in n-channel strained Si/ Si 1-x Ge x MOS structures. The influence of the strain in the Si layer and of the doping level is studied. Universal mobility curves µ eff as a function of the effective vertical field E eff are obtained for various state of strain, as well as a fall-off of the mobility in weak inversion regime, which reproduces correctly the experimental trends. We also observe a mobility enhancement up to 120 % for strained Si/ Si 0.70 Ge 0.30 , in accordance with best experimental data. The effect of the strained Si channel thickness is also investigated: when decreasing the thickness, a mobility degradation is observed under low effective field only.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electron effective mobility in strained-Si/Si1−xGex MOS devices using Monte Carlo simulation

Aubry-Fortuna

Dollfus

Galdin‐Retailleau

2005

Solid-State Electronics

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“…We have first investigated the influence of several parameters supported by the large amount of experimental data available for 100 lm gate width devices, which allows preliminary validation of the simulations versus gate length down to 100 nm [13]. Due to the moderate transport properties and to the large density of states in silicon devices, E-B modelling remains well applicable down to 70 nm gate length.…”

Section: Fringe Effectsmentioning

confidence: 99%

Modelling and measurements of the parasitic electrostatic capacitances in Si/SiGe n-HFET

Zerounian

Enciso-Aguilar

Hackbarth

et al. 2007

Solid-State Electronics

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Gate Length Scaling in High fMAX Si/SiGe n-MODFET

Anie

Enciso-Aguilar²,

Crozat³

et al. 2002

32nd European Solid-State Device Research Conference

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The performances of strained channel Si/Si 0.6 Ge 0.4 n-MODFETs as a function of gatelength have been investigated experimentally at 300K . The direct-current, microwave and noise performances of devices with gatelengths ranging from 0.5 µm to 0.1 µm are presented. Maximum oscillation frequency f MAX of 158 GHz is obtained for a 0.1 X 100 µm with f T = 42 GHz and a minimum noise figure NF min = 0.5 dB at 2.5 GHz showing the potential of SiGe technology. The dependence of small signal, and noise parameters on gatelength and biases has been analyzed to assess the impact of non stationary transport and of short channel effects on the device behavior.

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High performance 100 nm T-gate strained Si/Si/sub 0.6/Ge/sub 0.4/ n-MODFET

Cited by 3 publications

References 4 publications

Electron effective mobility in strained-Si/Si1−xGex MOS devices using Monte Carlo simulation

Electron effective mobility in strained-Si/Si1−xGex MOS devices using Monte Carlo simulation

Modelling and measurements of the parasitic electrostatic capacitances in Si/SiGe n-HFET

Gate Length Scaling in High fMAX Si/SiGe n-MODFET

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