High-performance 4H-SiC single photon avalanche diode operating at solar blind wavelength

Xin, Xiaobin; Hu, Jun; Alexandov, Petre; Zhao, J.H.; VanMil, Brenda L.; Gaskill, D. Kurt; Lew, Kok Keong; Myers-Ward, Rachael L.; Eddy, Charles R.

doi:10.1117/12.752683

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Comparison of 4H-SiC impact ionization models using experiments and self-consistent simulations

Akturk

Goldsman

Aslam

et al. 2008

Journal of Applied Physics

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We report comparisons of measured photocurrent versus voltage curves of avalanche photodiodes (APDs) with those calculated using different 4H-SiC hole and electron impact ionization coefficients. As the published impact ionization coefficients result in ionization rates that differ greatly in magnitude, the predicted breakdown voltages using these models vary by many volts. To this end, we investigate the breakdown voltage prediction capability of three prevailing impact ionization models in conjunction with several experiments. To obtain APD performance numerically, we developed a device simulator, which shows that the inclusion of proper electric field-dependent impact ionization rates can accurately predict a variety of measured current-voltage curves, breakdown voltages, and current multiplication rates.

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