High-Performance 850 nm VCSEL and Photodetector Arrays for 25 Gb/s Parallel Optical Interconnects

Li, N. Y.; Schow, Clint L.; Kuchta, Daniel M.; Doany, F. E.; Lee, B. G.; Luo, Wenbin; Xie, Chuan; Sun, Xiaoqing; Jackson, K. P.; Lei, Chun

doi:10.1364/ofc.2010.otup2

Cited by 42 publications

(15 citation statements)

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“…Only a single optical via is required for the quad-VCSEL array and a second for the quad-photodiode array. Figure 2 shows the quad-VCSEL and quad-PD arrays, which are custom 25 Gb/s-class high-speed optoelectronic arrays fabricated by Sumitomo Electric [5]. The OE devices are arranged in a 2 x 2 array on 50-µm pitch, matching prototype multimode multicore fiber fabricated by OFS having four 26-µm graded index cores within a single 125-µm glass fiber [6].…”

Section: Transceiver Design and Assemblymentioning

confidence: 99%

Multicore fiber 4 TX + 4 RX optical transceiver based on holey SiGe IC

Doany¹,

Kuchta²,

Rylyakov³

et al. 2014

2014 IEEE 64th Electronic Components and Technology Conference (ECTC)

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A novel optical transceiver with 4 transmitter plus 4 receiver channels designed for coupling to multicore multimode fiber has been fabricated and characterized. The transceiver is based on the holey Optochip concept where 4-channel VCSEL and photodiode arrays are flip-chip attached to a single-chip SiGe IC using AuSn solder. Optical vias (holes) are fabricated into the SiGe IC to enable optical access to the conventional topside emitting 850-nm optoelectronic arrays. The optoelectronic arrays are arranged in a quad-VCSEL and quad-photodiode configuration where the 4 devices are on a 2 x 2 array on a dense 50-µm pitch. The transceiver module is completed by flip-chip soldering the Optochip onto a 8 mm x 8 mm high-speed high-density organic carrier. Optical access through the backside of the IC is provided through 2 optical vias. Electrical I/O is supplied through BGA pads on 0.8 mm pitch at the bottom of the module.High-speed characterization was carried out between 2 modules soldered to test cards, a transmitter (TX) and a receiver (RX) module. Each of the 4 optical outputs from the TX Optochip was coupled into a MMF and directed to individual photodiodes in the RX module. Eye-diagrams were measured for TX outputs as well as TX-to-RX links at data rates 20 Gb/s to 42 Gb/s. The 4 optical links operate error free up to 40 Gb/s, achieving a record data rate for multimode parallel optical transceivers.

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Section: Transceiver Design and Assemblymentioning

confidence: 99%

Multicore fiber 4 TX + 4 RX optical transceiver based on holey SiGe IC

Doany¹,

Kuchta²,

Rylyakov³

et al. 2014

2014 IEEE 64th Electronic Components and Technology Conference (ECTC)

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“…The OE arrays used in the Optochip assemblies are 2 x 12 arrays of 850-nm VCSELs and photodiodes fabricated by Emcore Inc. [5]. These chips are 0.9mm x 3.5mm.…”

Section: Optochip Components and Assemblymentioning

confidence: 99%

Terabit/s-class 24-channel bidirectional optical transceiver module based on TSV Si carrier for board-level interconnects

Doany

Lee

Schow

et al. 2010

2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)

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We report here on the design, fabrication and characterization of highly-integrated 3-D Optochips consisting of a Si carrier platform with 4 flip-chip attached components: two 24-channel 850-nm optoelectronic (OE) arrays (VCSELs and photodiodes) and two 24-channel CMOS ICs (receivers and laser drivers). The Si carrier incorporates three copper wiring levels for interconnection between the CMOS ICs and the OE arrays, and a dense array of electrical through-silicon-vias (TSVs) for the off-carrier dc and high-speed electrical connections. In addition, to allow optical transmission through the silicon carrier, 150-m diameter "optical vias" (holes) are etched through the carrier at the locations of the optoelectronic array elements. The ICs and OEs are designed for 10 -15 Gb/s operation to provide 48-channel modules with bidirectional aggregate bandwidths of 240 to 360 Gb/s. Optochips based on TSV Si carriers with flip-chip bonded ICs and OEs have been assembled using AuSn solder. DC characterization verified electrically and optically operative Optochips with 24 VCSELs and 24 photodiodes (PDs). Assembly of the Optochips to a high-speed, high-density organic carrier to form the full optical modules has also been developed and demonstrated. The Si carrier TSV technology is key to enabling the bonding of the Optochip to the organic carrier using a C4 solder process.Initial high-speed characterization of the complete module showed receiver channels operating at 12.5 Gb/s and transmitter channels operating up to 15 Gb/s. This is the first demonstration of Terabus optical modules with dense 24 TX + 24 RX transceiver Optochips based on TSV Si carriers.

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“…At 30Gbps, they are expected to require apertures of 25μm or less. 17 Multi-mode fiber cores are expected to remain at 50μm. This will impact the practical responsivity (mean and standard deviation) that is obtainable in a system, due to the photodetector aperture not completely containing all optical modes.…”

Section: Single-mode Interfacesmentioning

confidence: 99%

“…This leads to current densities in excess of 10kA/cm 2 , which can be detrimental to reliability, particularly when operating at high temperatures. 17,19 Next generation systems will continue to scale the number of parallel optical channels 3,4,14 , with the number of parallel links in a single super computer approaching 40 million by 2016, according to IBM. 4 The reliability of each and every link in such systems will be crucial to the overall system reliability, due to the massive parallelism involved.…”

Section: Reliabilitymentioning

confidence: 99%