High-Performance ALD Al-Doped ZnO Thin-Film Transistors Grown on Flexible Substrates

Rezk, Ayman; Saadat, Irfan

doi:10.1109/led.2019.2890831

Cited by 16 publications

(8 citation statements)

References 11 publications

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“…Combined with the XRD results, it can be seen that preferred-growth-orientation transition of local AZO grains is the main reason for this phenomenon. For electron device applications, a (100) crystallization orientation of poly-crystalline AZO films is benefit for enhancing stability and mechanical performance [ 36 ].…”

Section: Resultsmentioning

confidence: 99%

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

et al. 2022

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Transparent electrodes are a core component for transparent electron devices, photoelectric devices, and advanced displays. In this work, we fabricate fully-transparent, highly-conductive Al-doped ZnO (AZO) films using an atomic layer deposition (ALD) system method of repeatedly stacking ZnO and Al2O3 layers. The influences of Al cycle ratio (0, 2, 3, and 4%) on optical property, conductivity, crystallinity, surface morphology, and material components of the AZO films are examined, and current conduction mechanisms of the AZO films are analyzed. We found that Al doping increases electron concentration and optical bandgap width, allowing the AZO films to excellently combine low resistivity with high transmittance. Besides, Al doping induces preferred-growth-orientation transition from (002) to (100), which improves surface property and enhances current conduction across the AZO films. Interestingly, the AZO films with an Al cycle ratio of 3% show preferable film properties. Transparent ZnO thin film transistors (TFTs) with AZO electrodes are fabricated, and the ZnO TFTs exhibit superior transparency and high performance. This work accelerates the practical application of the ALD process in fabricating transparent electrodes.

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Section: Resultsmentioning

confidence: 99%

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

et al. 2022

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“…The high N e and uncontrolled defect states in ZnO adversely affect the switching properties of the resulting TFTs with an ALD‐derived ZnO channel layer. To reduce the N e and defect density of ZnO, optimization of ALD processes, 42–45 post‐deposition treatment, 46,47 and doping in ZnO channel 48–51 have been suggested. Chen et al 42 reported the fabrication of TFTs with thermal ALD‐derived ZnO channel layers at a substrate temperature of 100°C without any post‐annealing.…”

Section: Ald‐derived N‐channel Oxide Tftsmentioning

confidence: 99%

“…This performance can be attributed to the close interface match between the ZnO channel and the Al 2 O 3 gate insulator; both layers were sequentially deposited by ALD without adverse vacuum breaking (Figure 4B). Rezk and Saadat 49 reported that aluminum doping affected the device performance of the resulting TFTs during ZnO growth by ALD. The incorporated aluminum dopant acted as a shallow donor and enhanced crystallization in the ZnO film at a concentration of less than 2 at%.…”

Section: Ald‐derived N‐channel Oxide Tftsmentioning

confidence: 99%

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

2022

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This paper reviews recent developments in the fabrication of high‐performance n‐channel metal‐oxide thin‐film transistors (TFTs) through atomic‐layer deposition (ALD), which are now attracting attention due to their potential for use in augmented and virtual reality, ultra‐high‐definition organic light‐emitting diodes, and flexible electronics. Recent trends in research on TFT backplanes for display applications are provided in the introduction. In the main section, ALD‐derived n‐type oxides serving as active layers are classified into binary, ternary, and quaternary systems, and recent developments and critical issues in n‐channel oxide TFTs are described. The performance of n‐channel oxide TFTs can be boosted through advanced architectures, including stacked heterojunction channels using two‐dimensional electron gases, and the introduction of high‐k dielectric such as ALD‐derived hafnium oxide, which is highlighted in this review. Finally, progress in p‐channel ALD‐derived oxide TFTs is briefly addressed with respect to complementary metal–oxide‐semiconductor applications.

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“…Since the In−Ga−Zn-O (IGZO) semiconductor and its thinfilm transistors (TFTs) were first reported in 2004, 1 oxide semiconductors have been rapidly replacing silicon-based semiconductors in many electronic devices. Oxide semiconductors have several advantages, such as a low-temperature process (≤350 °C), high mobility properties (≥20 cm 2 /(V s)), 2,3 and excellent uniformity for large-screen televisions (≥55 in.). 4 Oxide semiconductors are also applied to lowtemperature polycrystalline oxide backplanes in mobile electronic devices because of their extremely low off-currents (∼1 × 10 −18 A/μm).…”

Section: ■ Introductionmentioning

confidence: 99%

Significance of Pairing In/Ga Precursor Structures on PEALD InGaO_x Thin-Film Transistor

Hong

Jeong

Lee

et al. 2021

ACS Appl. Mater. Interfaces

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Atomic layer deposition (ALD) is a promising deposition method to precisely control the thickness and metal composition of oxide semiconductors, making them attractive materials for use in thin-film transistors because of their high mobility and stability. However, multicomponent deposition using ALD is difficult to control without understanding the growth mechanisms of the precursors and reactants. Thus, the adsorption and surface reactivity of various precursors must be investigated. In this study, InGaO (IGO) semiconductors were deposited by plasma-enhanced atomic layer deposition (PEALD) using two sets of In and Ga precursors. The first set of precursors consisted of In(CH3)3[CH3OCH2CH2NHtBu] (TMION) and Ga(CH3)3[CH3OCH2CH2NHtBu]) (TMGON), denoted as TM-IGO; the other set of precursors was (CH3)2In(CH2)3N(CH3)2 (DADI) and (CH3)3Ga (TMGa), denoted as DT-IGO. We varied the number of InO subcycles between 3 and 19 to control the chemical composition of the ALD-processed films. The indium compositions of TM-IGO and DT-IGO thin films increased as the InO subcycles increased. However, the indium/gallium metal ratios of TM-IGO and DT-IGO were quite different, despite having the same InO subcycles. The steric hindrance of the precursors and different densities of the adsorption sites contributed to the different TM-IGO and DT-IGO metal ratios. The electrical properties of the precursors, such as Hall characteristics and device parameters of the thin-film transistors, were also different, even though the same deposition process was used. These differences might have resulted from the growth behavior, anion/cation ratios, and binding states of the IGO thin films.

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High-Performance ALD Al-Doped ZnO Thin-Film Transistors Grown on Flexible Substrates

Cited by 16 publications

References 11 publications

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

Significance of Pairing In/Ga Precursor Structures on PEALD InGaO_x Thin-Film Transistor

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High-Performance ALD Al-Doped ZnO Thin-Film Transistors Grown on Flexible Substrates

Cited by 16 publications

References 11 publications

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

Significance of Pairing In/Ga Precursor Structures on PEALD InGaOx Thin-Film Transistor

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Significance of Pairing In/Ga Precursor Structures on PEALD InGaO_x Thin-Film Transistor