High-performance AlGaAs-based VCSELs emitting in the 760nm wavelength range

Rinaldi, F.; Ostermann, Johannes; Kroner, A.; Michalzik, Rainer

doi:10.1016/j.optcom.2006.09.004

Cited by 13 publications

(9 citation statements)

References 4 publications

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“…The performance has been limited in output power and maximum temperature of operation. In some cases [18][19][20] the device only operated in pulsed mode at room temperature, while in other results [15][16][17] the devices did operate CW at room temperature, but the output power was limited to less than 1 mW.…”

Section: Introductionmentioning

confidence: 95%

“…We have fabricated devices with wavelengths in the range from 700 to 720 nm, but unlike previous reports [15][16][17][18][19][20] our devices are based upon GaInP/AlGaInP active regions. A large variation in wavelength across a single wafer was achieved by not rotating the wafer during growth.…”

Section: Extended Wavelength Performancementioning

confidence: 99%

“…Knigge et al [14] were able to achieve pulsed operation down to 629 nm, although no power was reported, and 2.1 mW of room temperature CW power at 647 nm. Several groups have reported efforts to extend the VCSEL wavelength into the range from 700 to 740 nm [15][16][17][18][19][20]. All of these efforts above 700 nm have been based upon the AlGaAs materials system for both the mirrors and the active regions.…”

Section: Introductionmentioning

confidence: 99%

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Advances in Red VCSEL Technology

Johnson

Hibbs‐Brenner

Hogan

et al. 2012

Advances in Optical Technologies

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Red VCSELs offer the benefits of improved performance and lower power consumption for medical and industrial sensing, faster printing and scanning, and lower cost, higher speed interconnects based upon plastic optical fiber (POF). However, materials challenges make it more difficult to achieve the desired performance than at the well-developed wavelength of 850 nm. This paper will describe the state of the art of red VCSEL performance and the results of development efforts to achieve improved output power and a broader temperature range of operation. It will also provide examples of the applications of red VCSELs and the benefits they offer. In addition, the packaging flexibility offered by VCSELs, and some examples of non-Hermetic package demonstrations will be discussed. Some of the red VCSEL performance demonstrations include output power of 14 mW CW at room temperature, a record maximum temperature of 115• C for CW operation at an emission wavelength of 689 nm, time to 1% failure at room temperature of approximately 200,000 hours, lifetime in a 50• C, 85% humidity environment in excess of 3500 hours, digital data rate of 3 Gbps, and peak pulsed array power of greater than 100 mW.

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Section: Introductionmentioning

confidence: 95%

Section: Extended Wavelength Performancementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Advances in Red VCSEL Technology

Johnson

Hibbs‐Brenner

Hogan

et al. 2012

Advances in Optical Technologies

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“…3 Even more interesting is an analogous method known as an inverted−relief technique. Its main idea consists in grow− ing an extra l/(4n R )−thick layer on the top of the output DBR structure and etching a circular disk−shaped structure through this layer in the DBR centre (lines 22, 25, and 30-32) [35][36][37][38][39] [Fig. 3(d)].…”

Section: Mirror Lossesmentioning

confidence: 99%

VCSEL structures used to suppress higher-order transverse modes

Nakwaski

2011

Opto-Electronics Review

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Currently unwanted excitation of higher-order transverse modes is the most serious drawback of vertical-cavity surface-emitting diode lasers (VCSELs) limiting their possible applications. In the present paper, various methods used to suppress those modes are described and their effectiveness is compared. It is well known that, because of a nearly uniform current injection into their active regions, small-aperture VCSELs without any modification offer quite high single-fundamental-mode (SFM) output. However, their series resistance is often too high, which aggravates their high-modulation performance. Similarly uniform current injection may be also achieved with the aid of a tunnelling junction. Generally, methods suppressing higher-order modes take advantage of higher optical gain within the central part of the active region, higher radiation losses outside this region and/or higher central mirror reflectivity. Currently, applications of a tunnel junction, an impurity-induced disordering or an inverted shallow surface relief seem to be the simplest and the most effective methods. The deep etched holey structure or the ARROW structure enable obtaining similar single-mode output powers but they may be used in special cases only because of their complex technology. Photonic crystals may probably enable more advanced mechanisms of suppressing higher-order modes in future because currently their application seems to be still far from being optimised.

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“…Distributed Bragg reflectors (DBRs), consisting of periodic quarter wavelength stacks of high and low refractive index compound semiconductors, are extensively used in optical devices such as vertical cavity surface emitting lasers, resonant-cavity enhanced photo-detectors, and recently also in optically pumped vertical extended cavity surface emitting lasers (VECSELs) [1], semiconductor saturable absorber mirrors (SESAMs) [2], and light beam intensity modulators [3]. All those applications impose the highest requirements on the reflectivity of Bragg mirrors that often have to be higher than 99.5%.…”

Section: Introductionmentioning

confidence: 99%

Effects of composition grading at heterointefaces and layer thickness variations on Bragg mirror quality

Gaca

Wójcik

Jasik

et al. 2008

Opto-Electronics Review

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GaAs/AlAs Bragg mirrors on GaAs with varied number of layer pairs were grown, by molecular beam epitaxy (MBE), to be applied for semiconductor saturable absorber mirrors (SESAMs) and intensity modulators. Due to the random variation of the growth rate, substrate surface roughness, and interdiffusion at the interfaces, precise control of the growth conditions of deposited layers poses a serious problem. Usually, thickness variations and composition grading at the heterointefaces result in variations of the mirror reflectivity. In this paper, the high resolution X-ray diffraction (HRXRD), optical reflectance, Rutherford backscattering/channelling (RBS), supported by numerical evaluation methods were employed to determine both the exact thickness of each layer and the composition grading at the interface between succeeding layers of GaAs/AlAs-based mirrors. To reduce ambiguity and to speed up the analysis, the rocking curves and RBS spectra were simulated concurrently, using results of one simulation to verify the others. This process was carried out until the best fit between experimental and calculated curves was achieved. The complementary use of both methods results in improved sensitivity and makes the whole process of evaluation of the thickness variation of each layer and the size of the composition grading at the interfaces less time consuming.

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High-performance AlGaAs-based VCSELs emitting in the 760nm wavelength range

Cited by 13 publications

References 4 publications

Advances in Red VCSEL Technology

Advances in Red VCSEL Technology

VCSEL structures used to suppress higher-order transverse modes

Effects of composition grading at heterointefaces and layer thickness variations on Bragg mirror quality

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