“…In light of the efficient FRET from TPMCN to C545T , matched frontier orbital energy levels of the host and guest, and bipolar charge transport properties of the host, HLCT-SF OLEDs were fabricated in a conventional device architecture of ITO/MoO 3 (10 nm)/TAPC (25 nm)/ TPMCN : x wt % C545T (20 nm)/TmPyPB (35 nm)/LiF (1 nm)/Al (100 nm), where x is 0.3, 0.5, 1.0, and 1.5 (Figure S2). ITO (indium tin oxide) and Al serve as the anode and cathode; MoO 3 and LiF are used in the hole- and electron-injection layers; TAPC (1,1-bis[4-[ N , N ′-di( p -tolyl)amino]phenyl]cyclohexane) and TmPyPB (1,3,5-tri[(3-pyridyl)-phen-3-yl]benzene) are the hole- and electron-transporting materials, respectively.…”