In recent years, piezoelectric materials, such as AlN, lithium niobate (LN) and GaAs, are frequently applied to acoustooptic (AO) coupling interactions with great potentials. [16][17][18][19][20][21][22][23][24] With a travelling SAW actuated by the interdigital transducer (IDT), the optical waves in waveguides are scattered by the travelling refractive index gratings and frequencyshifted through Doppler effect. [25] The AO coupling in piezoelectric materials offers a promising way to implement on-chip AO modulation, microwave photonic filtering, acousto-optic frequency shift, and nonreciprocal light propagation. [16,17,26,27] Different from the intrinsic optomechanical interactions in waveguides, [28][29][30][31][32][33][34] it is unnecessary to design suspended waveguides or optomechanical cavities for the AO interactions, which guarantees the stability and feasibility for on-chip applications. [16,35] Meanwhile, the electrically driven AO interactions exhibit higher AO scattering efficiency than the intrinsic optomechanical interactions, which can be adjusted in both optical domain and electrical domain. [36,37] Although LN (d 33 = 6 pC N -1 ) is a good candidate in AO interactions for its outstanding optical and piezoelectric properties, [38] it is not compatible with complementary metal-oxide-semiconductor (CMOS) technology to achieve large-scale fabrication. [20][21][22] As for AlN, it is generally deposited on silicon substrate through magnetic sputtering that is compatible with CMOS technology, but it poses a challenge to design waveguide structures in AlN layer because of the smaller refractive index than silicon substrate. [17,18] Therefore, suspended waveguide structures are indispensable for AlN on silicon substrate to carry out AO interactions. Surprisingly, a nonsuspended structure of AlN deposited on silicon-on-insulator (SOI) platform with a SiO 2 interlayer had realized AO modulation recently, where the optical wave is mostly confined in the nonpiezoelectric silicon layer instead of AlN layer. [39] In that structure, the SAW actuated by the IDT propagates from AlN layer across SiO 2 interlayer and finally modulates the optical waves in the silicon waveguides, where the SiO 2 interlayer greatly increases the SAW propagation loss and degrades the acoustic performances. [40] At last, with the same CMOS-compatible deposition as AlN and better piezoelectric properties than AlN, Aluminum scandium nitride (AlScN) has attracted extensive attention for its excellent piezoelectric properties in the micro-electromechanical system applications. In this work, AlScN is demonstrated to be a promising candidate for on-chip acousto-optic coupling interactions with outstanding piezoelectric properties as well. Based on piezoelectric Al 0.6 Sc 0.4 N film deposited on silicon-on-insulator platform, the proposed devices exhibit impressive acousto-optic coupling performances over a short interaction length of 210 µm with surface acoustic waves actuated by interdigital transducers. Meanwhile, the acousto-optic coupling...