High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated by Atomic Layer Deposition

Cho, Min Hoe; Seol, Hyunju; Yang, Hoichang; Yun, Pil Sang; Bae, Jong Uk; Park, Kwon‐Shik; Jeong, Jae Kyeong

doi:10.1109/led.2018.2812870

Cited by 50 publications

(30 citation statements)

References 11 publications

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“…Electrical characteristics of the TFTs with ALDderived a-IGZO channels at different PDA temperatures. Data adapted from reference [11].…”

Section: Resultsmentioning

confidence: 99%

8.1: Invited Paper: Advanced Process and Structure for High Performance Oxide Thin‐Film Transistors

Jeong

2019

Symp Digest of Tech Papers

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The required carrier mobility of metal oxide thin‐film transistors (TFTs) has been increasing rapidly to meet the demands of the ultra‐high‐resolution, large panel size and three dimensional visual effects as a megatrend of flat panel display. However, the typical field‐effect mobility of IGZO TFTs in the practical production line is less than 10 cm2/Vs, which is still not enough to drive the high‐end flat panel displays with ≥ 300 ppi, more than 60 inch and high frame rate ( ≥ 240 Hz). Approaches to improve the mobility of electron carriers in metal oxide TFT would involve the optimization of cation composition, stacked channel structure and the lattice ordering‐induced crystallization. In this paper, we presented our recent efforts toward the high performance and good reliability, which included the non‐IGZO composition, double channel structure such as ZTO/IZO and ZTO/ITO, the metal‐induced crystallization at a low temperature, and atomic layer deposited IGZO TFTs.

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“…Electrical characteristics of the TFTs with ALDderived a-IGZO channels at different PDA temperatures. Data adapted from reference [11].…”

Section: Resultsmentioning

confidence: 99%

8.1: Invited Paper: Advanced Process and Structure for High Performance Oxide Thin‐Film Transistors

Jeong

2019

Symp Digest of Tech Papers

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“…On the other hand, atomic layer deposition (ALD) has gained attention as the advanced process for growing an a-IGZO channel layer because of its intriguing features, such as its accurate thickness controllability, good uniformity, easy cation composition controllability, and good step coverage. Some of the previous reports showed better electrical performance compared to the sputtering process [8][9][10][11][12]. In this report an a-IGZO TFTs fabricated by ALD were examined.…”

Section: Introductionmentioning

confidence: 88%

P‐13: High Performance a‐IGZO Thin‐Film Transistors Grown by Atomic Layer Deposition: Cation Combinatorial Approach

Cho

Seol

et al. 2019

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We report the effect of the cation composition on the electrical performance of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) which was deposited by atomic layer deposition (ALD). The In/In+Ga ratio of a-IGZO TFT was increased, enhancement of the field-effect mobility (FE) value was observed. The device with a higher In/In+Ga ratio: the In0.45Ga0.15Zn0.40O transistor showed a higher FE value of 48.3 cm 2 /Vs, VTH of -4.06 V, SS of 0.45 V/decade, and ION/OFF ratio of > 10 7 . Simultaneously, Density of States (DOSs) profile in a forbidden band gap of the a-IGZO semiconductor were extracted based on the Meyer-Neldel rule (MN rule) to obtain an insight into the cation composition dependent performance of a-IGZO TFTs.

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“…Backpanels for AMLCD/AMOLEDs often use n-type TFTs with indium tin oxide [8] and amorphous indium gallium zinc oxide (a-IGZO) [9]. It is due to their high field effect mobility of >10 cm 2 V −1 s −1 and high ON/OFF current ratio of >10 7 [1].…”

Section: Introductionmentioning

confidence: 99%

A Comprehensive Density-of-States Model for Oxide Semiconductor Thin Film Transistors

Rajshekar

Kannadassan

2021

Preprint

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In this paper, a comprehensive Density of States model was proposed to understand the origin of conductivity and the performance of p-type and n-type oxide semiconductor thin film transistors (TFTs). To validate the model, the simulated I-V characteristics are compared with measured results of p-type Cu2O & SnO and n-type SnO2 TFTs. It was found that cation vacancies were responsible for hole conduction in p-type TFTs, while anion vacancies and/or metal interstitial were responsible for electron conduction in n-type TFTs. This was observed by assigning the cation vacancies to acceptor-like Gaussian states and anion vacancies and/or metal interstitial to Donor-like Gaussian states respectively. The characteristic slopes in conduction/valence band-tail states are due to disorders present in the oxide semiconductors. The model is successfully delivering the physical insight and path way to circuit simulation of large scale integration of pixel circuits AMLCD/AMOLED displays.

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High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated by Atomic Layer Deposition

Cited by 50 publications

References 11 publications

8.1: Invited Paper: Advanced Process and Structure for High Performance Oxide Thin‐Film Transistors

8.1: Invited Paper: Advanced Process and Structure for High Performance Oxide Thin‐Film Transistors

P‐13: High Performance a‐IGZO Thin‐Film Transistors Grown by Atomic Layer Deposition: Cation Combinatorial Approach

A Comprehensive Density-of-States Model for Oxide Semiconductor Thin Film Transistors

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