High-Performance Amorphous Indium Oxide Thin-Film Transistors Fabricated by an Aqueous Solution Process at Low Temperature

Choi, Kookhyun; Kim, Min Seok; Chang, Sung Ok; Oh, Tae Yeon; Jeong, Shin Woo; Ha, Hyeon Jun; Ju, Byeong Kwon

doi:10.7567/jjap.52.060204

Cited by 20 publications

(16 citation statements)

References 27 publications

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“…For IZO xerogel, the initial decrease of weight for IZO below 180 °C is attributed to the decomposition of the residual nitrate species originating from the metal nitrate salt. 32 The continuous decreased weight between 180 °C to 350 °C can is mainly due to the dihydroxylation. 33 When the temperature exceeds 350 °C, the reduction in mass has not been observed, suggesting that complete transformation from xerogel to IZO oxide has been completed.…”

Section: Resultsmentioning

confidence: 99%

Potential solution-induced HfAlO dielectrics and their applications in low-voltage-operating transistors and high-gain inverters

Sun

et al. 2018

RSC Adv.

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Recently, much attention has been paid to the investigation of solution-driven oxides for application in thin film transistors (TFTs). In current study, a fully solution-based method, using 2-methoxyethanol as solvent, has been adopted to prepare InZnO thin films and HfAlO x gate dielectrics. Amorphous HfAlO x thin films annealed at 600 C have shown a high transparency (>85%), low leakage current density (6.9 Â 10 À9 A cm À2 at 2 MV cm À1 ), and smooth surface. To verify the potential applications of HfAlO x gate dielectrics in oxide-based TFTs, fully solution-induced InZnO/HfAlO x TFTs have been integrated. Excellent electrical performance for InZnO/HfAlO x TFTs annealed at 450 C has been observed, including a low operating voltage of 3 V, a saturated mobility of 5.17 cm 2 V À1 s À1 , a high I on /I off of $10 6 , a small subthreshold swing of 87 mV per decade, and a threshold voltage shift of 0.52 V under positive bias stress (PBS) for 7200 s, respectively. In addition, time dependent threshold voltage shift under PBS could be described by a stretched-exponential model, which can be due to charge trapping in the semiconductor/dielectric interface. Finally, to explore the possible application in logic operation, a resistor-loaded inverter based on InZnO/HfAlO x TFTs has been built and excellent swing characteristic and well dynamic behavior have been obtained. Therefore, it can be concluded that fully solution-driven InZnO/HfAlO x TFTs have demonstrated potential application in nontoxic, eco-friendly and low-power consumption oxide-based flexible electronics. rsc.li/rsc-advances 36584 | RSC Adv., 2018, 8, 36584-36595 This journal is

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Section: Resultsmentioning

confidence: 99%

Potential solution-induced HfAlO dielectrics and their applications in low-voltage-operating transistors and high-gain inverters

Sun

et al. 2018

RSC Adv.

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“…The molecules were drawn together during the evaporation of the solvent, which led to the transition from the ‘sol’ to the ‘gel’ state . The subsequent weight loss can be attributed to the thermal decomposition of metal nitrate and the evaporation of the volatile nitrate precursor . The dehydroxylation of the scandium hydroxide precursor occurred at around 260 °C and was completed at around 450 °C.…”

Section: Resultsmentioning

confidence: 99%

Water‐Induced Scandium Oxide Dielectric for Low‐Operating Voltage n‐ and p‐Type Metal‐Oxide Thin‐Film Transistors

Liu

Zhu

et al. 2015

Adv Funct Materials

157

136

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7180 wileyonlinelibrary.com IntroductionIn the past decade amorphous metaloxide thin-fi lm transistors (TFTs) have been studied in depth for applications in active-matrix organic light-emitting diodes (AMOLEDs), solar cells, biosensor arrays, and photodetectors. [ 1 ] Along with the rapid developments in display technology, highresolution and high-speed displays have become one of the growing trends. In this regard, energy consumption has turned out to be an inevitable issue especially for mobile, battery-powered applications. As a low-voltage operation of the oxide TFTs is demanded for practical applications, it is necessary to develop novel gate dielectrics for producing a large areal capacitance. [ 2 ] The achievements of low-voltage oxide TFTs have been extensively reported in recent works, including the use of inorganic high-k dielectrics, [ 3 ] organic self-assembled-monolayer dielectrics, [ 4 ] and electrolyte dielectrics. [ 5 ] Among these, the use of inorganic high-k dielectrics is the most attractive option as it simultaneously enables a low leakage current, through the use of a thicker fi lm, as well as a low-voltage operation. The high-k dielectrics can be prepared by various methods such as metal anodic oxidation method, [ 6 ] vacuum-based deposition, [ 7 ] and low-cost solution-based techniques. [ 8 ] [ 12 ] silicates, [ 13 ] etc.) that could potentially replace conventional dielectrics, such as SiO 2 and SiN x . To the best of our knowledge, there are few reports on the demonstration of scandium oxide (Sc 2 O 3 ) as the gate dielectric in TFT devices.As a high-k material Sc 2 O 3 has a dielectric constant of 14, a bandgap of 6.3 eV and an excellent thermal stability with Si. [ 14 ] In addition, Sc 2 O 3 has been found to possess a negative fi xed charge. This is benefi cial to obtain a positive threshold or turnon voltage for n-type TFTs that operate in the enhancement mode. [ 15 ] Concerning the CMOS architecture development based on solution processing, a wet step is inevitably involved. In this regard, the resistance to moisture absorption is another important , a large current ratio ( I on / I off ) of 2.7 × 10 7 and high stability. Moreover, as far as we know it is the fi rst time that solution-processed p-type oxide TFTs based on a high-k dielectric are achieved. The as-fabricated p-type CuO/ScO x TFTs exhibit a large I on / I off of around 10 5 and a hole mobility of 0.8 cm 2 V −1 at an operating voltage of 3 V. To the best of our knowledge, these electrical parameters are among the highest performances for solution-processed p-type TFTs, which represents a great step towards the achievement of low-cost, all-oxide, and low-power consumption CMOS logics.

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“…The most appealing properties of these transistors are their high electrical performance and optical transparency 2 – 6 . Recently, remarkable progress has been achieved in the development of fabricating such oxide based transistors using low-cost solution processing techniques 7 , 8 , even on flexible substrates when the curing step was done by a photochemical method 9 .…”

Section: Introductionmentioning

confidence: 99%

A Multifunctional Interlayer for Solution Processed High Performance Indium Oxide Transistors

Kyndiah

Ablat

Guyot-Reeb

et al. 2018

Sci Rep

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Multiple functionality of tungsten polyoxometalate (POM) has been achieved applying it as interfacial layer for solution processed high performance In2O3 thin film transistors, which results in overall improvement of device performance. This approach not only reduces off-current of the device by more than two orders of magnitude, but also leads to a threshold voltage reduction, as well as significantly enhances the mobility through facilitated charge injection from the electrode to the active layer. Such a mechanism has been elucidated through morphological and spectroscopic studies.

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High-Performance Amorphous Indium Oxide Thin-Film Transistors Fabricated by an Aqueous Solution Process at Low Temperature

Cited by 20 publications

References 27 publications

Potential solution-induced HfAlO dielectrics and their applications in low-voltage-operating transistors and high-gain inverters

Potential solution-induced HfAlO dielectrics and their applications in low-voltage-operating transistors and high-gain inverters

Water‐Induced Scandium Oxide Dielectric for Low‐Operating Voltage n‐ and p‐Type Metal‐Oxide Thin‐Film Transistors

A Multifunctional Interlayer for Solution Processed High Performance Indium Oxide Transistors

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