high-performance and high-reliability 80-nm gate-length DTMOS with indium super steep retrograde channel

Abstract

In this paper, we demonstrate for the first time a high-performance and high-reliability 80-nm gate-length dynamic threshold voltage MOSFET (DTMOS) using indium super steep retrograde channel implantation. Due to the steep indium super steep retrograde (In-SSR) dopant profile in the channel depletion region, the novel In-SSR DTMOS features a low in the off-state suitable for low-voltage operation and a large body effect to fully exploit the DTMOS advantage simultaneously, which is not possible with conventional DTMOS. As a result, excellent 80-nm gate length transistor characteristics with drive current as high as 348 A/ m (off-state current 40 nA/ m), a record-high = 1022 mS/mm, and a subthreshold slope of 74 mV/dec, are achieved at 0.7 V operation. Moreover, the reduced body effects that have seriously undermined conventional DTMOS operation in narrow-width devices are alleviated in the In-SSR DTMOS, due to reduced indium dopant segregation. Finally, it was found for the first time that hot-carrier reliability is also improved in DTMOS-mode operation, especially for In-SSR DTMOS. Index Terms-DTMOS, indium, super-steep-retrograde (SSR) channel.

Supersteep Retrograde Channel on FinFET

“…(1,2) In this study, we used supersteep retrograde (SSR) technology to improve the SCEs in fin field-effect transistors (FinFETs). (3)(4)(5) SSR technology is a vertical heterogeneity doping technology used in channel engineering. (6) We aimed to identify the optimal size of FinFETs to which SSR technology is applied.…”