High performance and high reliability InP HEMT low noise amplifiers for phased-array applications

Quantum simulation for separate double gate InA1As/InGaAs HEMT

“…Among all types of HEMTs, the superior microwave performance capability of pHEMT (pseudomorphic HEMT) is being selected for high efficiency lighting, wireless local area networks and RF applications [3]. InP HEMT is used as a high performance and low noise amplifier for phase array applications [4]. The double gate technology rapidly evolved to provide high transconductance and improved charge control in the channel to make way for gate-length scaling.…”

Progressive Schottky junction reaction induced degradation in Pt-sunken gate InP HEMT MMICs for high reliability applications

“…Superior microwave and millimeter wave performance of InGaAs/InAlAs/InP high electron mobility transistor (HEMT) microwave monolithic integrated circuits (MMICs) has been demonstrated for space and military applications over the frequency ranges 44 GHz [1][2], 94 GHz [3][4][5], 118 GHz [6][7], 155 GHz [8][9], 183-220 GHz [8,[10][11][12], and beyond 250 GHz [13][14][15]. To ensure the reliability of InAlAs/InGaAs/InP HEMT MMICs during their lifetime operation, it is important to demonstrate the high reliability performance of InAlAs/InGaAs/InP HEMT MMICs subjected to elevated temperature lifetest.…”

“…This demonstrates the maturity of InAlAs/InGaAs/InP HEMT and MHEMT technologies and its readiness for space/military and commercial applications. These achievements of superior microwave performance and high reliability lead to the first insertion of InP HEMT low noise amplifiers operating at Qband for phased-array applications at Northrop Grumman Corporation (NGC) [2].…”

“…Although recent investigation shows that InP HEMTs with Pt-sunken gate have demonstrated superior reliability performance to InP HEMTs with Ti-gate [12,[25][26]33], the reliability evaluation of 0.1-μm Pt-sunken gate InP HEMT MMICs on 4-inch InP substrates has been lacking. The fabrication of 0.1-μm InP HEMT low noise amplifiers (LNAs) on 4-inch InP substrates is essential for next-generation high performance phased-array applications requiring a high volume of LNA elements [2]. In this study, the reliability performance of 0.1-μm InP HEMT LNAs on 4-inch InP substrates subjected to elevated temperature lifetesting was evaluated for the first time.…”