High performance and low-cost UV–Visible–NIR photodetector based on tin sulphide nanostructures

Materials Modelling of π‐Phase Monochalcogenides

“…In parallel, multiple studies of potential applications have explored the use of this cubic phase of monochalcogenides in solar cells, [7] for thermoelectric conversion [8] and as a high performance near infrared photodetector for SnS [9,10] and for SnSe. [6] These studies demonstrate the breadth of potential applications and the usability of this novel cubic phase in cases where the large band gap semiconducting property and nanoscale structures are valuable advantages in next generation devices.…”

Enhanced photoresponse of Cu2ZnSnS4 absorber thin films fabricated using multi-metallic stacked nanolayers

“…Sensitivity ( S ) is defined as the relative increase in the current when a light source illuminates the film and is measured using relation, 60 where I ph = Photo current = ( I L − I D ), I L is the light current, and I D is the dark current.…”

“…Sensitivity (S) is dened as the relative increase in the current when a light source illuminates the lm and is measured using relation, 60 Sð%Þ ¼…”

Epitaxial Growth of π-SnS on PbS Substrates

“…Semiconductor thin films grown epitaxially on single-crystal substrates are of central importance in semiconductor technology. , Cubic π-SnS has been synthesized by chemical methods (such as colloidal synthesis, chemical bath deposition (CBD), aerosol-assisted chemical vapor deposition, and atomic layer deposition (ALD)) and thermal evaporation techniques. − ,− Very recently, Abutbul and Golan reported chemical epitaxy of π-SnS thin films onto two types of substrates, GaAs(100)/PbS(110) and GaAs(111)/PbS(111), which comprised PbS intermediate layers deposited onto two different crystal faces of GaAs. This is a promising development that requires confirmation and validation.…”