2018
DOI: 10.1126/sciadv.aap9104
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High-performance and scalable metal-chalcogenide semiconductors and devices via chalco-gel routes

Abstract: Chalco-gel–based metal-chalcogenide semiconductors and scalable high-performance electronic devices were demonstrated.

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Cited by 57 publications
(19 citation statements)
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“…As a consequence, the presence of the metallic edge states in nanosized c-TMDs confers them peculiar properties, absent in their bulk counterparts, that affect not only their catalytic activity but also their optical and electrical characteristics: the changes in electronic structure prompted by the nanosizing and the few-layering of c-TMDs also affect their band gap, an effect that is particularly pronounced for group VI 2H c-TMDs. When the layer number is small enough, the interlayer orbital interaction changes with respect from the bulk multilayered material, widening the band gap and transitioning it from indirect to direct. , Due to this peculiarity, few-layered c-TMDs have found a number of applications in the optoelectronic field with remarkable results. , …”
Section: Structure Of Group VI Transition Metal Chalcogenidesmentioning
confidence: 99%
“…As a consequence, the presence of the metallic edge states in nanosized c-TMDs confers them peculiar properties, absent in their bulk counterparts, that affect not only their catalytic activity but also their optical and electrical characteristics: the changes in electronic structure prompted by the nanosizing and the few-layering of c-TMDs also affect their band gap, an effect that is particularly pronounced for group VI 2H c-TMDs. When the layer number is small enough, the interlayer orbital interaction changes with respect from the bulk multilayered material, widening the band gap and transitioning it from indirect to direct. , Due to this peculiarity, few-layered c-TMDs have found a number of applications in the optoelectronic field with remarkable results. , …”
Section: Structure Of Group VI Transition Metal Chalcogenidesmentioning
confidence: 99%
“…For these reasons, there have been enormous efforts to develop photodetectors with new photosensing materials and device architectures for broadband photodetection, such as colloidal quantum dots (QDs) ( 7 ), amorphous oxide semiconductors (AOSs) ( 8 ), organic semiconductors ( 9 ), perovskite materials ( 10 ), and two-dimensional materials (graphene and transition metal dichalcogenides) ( 11 ). In particular, for maximizing the photosensitivity in a broadband range, hybrid device architectures of photodetectors have been largely pursued ( 12 , 13 ).…”
Section: Introductionmentioning
confidence: 99%
“…TMDCs are semiconducting 2D materials represented by the formula MX2, where M corresponds to transition metal atom (generally from groups IV-VI) and X indicates a chalcogen atom (S, Se or Te) (Refs. [1][2][3][4]. A TMDCs monolayer has a layered gap structure, where a single layer of M is sandwiched between two layers of X.The intralayer M-X bonds are predominantly covalent, while the layers interact by weak van der Waals forces, which determines the 2D nature of the crystalline phases.…”
Section: Introductionmentioning
confidence: 99%