High performance and stable perovskite solar cells using vanadic oxide as a dopant for spiro-OMeTAD

Wang, Xiaobing; Wu, Jihuai; Yang, Yuqian; Liu, Xuping; Guo, Qiyao; Song, Zeyu; Li, Guodong; Huang, Miaoliang

doi:10.1039/c9ta03351c

Cited by 92 publications

(68 citation statements)

References 54 publications

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“…One can easily distinguish that N LG flakes with different layer numbers coexist in a single crystal domain according to their discriminating OCs. Furthermore, all the graphene layers shared the same nuclei center and the lateral size decreases as N increases, which is in good agreement with the previous reports . From the Fig.…”

Section: Resultssupporting

confidence: 92%

“…Each domain can exhibit AB stacking or twisted stacking with at least one twisted interface . In a CVD‐grown graphene flakes, approximately five to ten graphene layers can be grown at the central region of each single crystal domain while they gradually decrease the layer number toward 1LG at the edges of the domain . Interestingly, in the same crystal domain, monolayer or multilayer hexagons show decreased lateral sizes and share almost the same hexagonal center, implying that they nucleated from the same active sites .…”

Section: Introductionmentioning

confidence: 99%

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Identifying the stacking order of multilayer graphene grown by chemical vapor deposition via Raman spectroscopy

Lin

Chen

Lü

et al. 2017

J Raman Spectroscopy

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Large-area monolayer (1LG) and multilayer graphene (MLG) grown by chemical vapor deposition (CVD) have been of great technological importance for the graphene electronics and photonics. Such CVD-grown MLG (CVD-MLG) flakes consist of multiple single crystal domains, whose stacking orders can be diverse due to the various choices of layer number, stacking sequence, and twist angle. Here, we demonstrated a way to identify the stacking order of CVD-MLG via Raman spectroscopy. The CVD-grown 1LG can be identified by comparing its optical contrast or G mode intensity with those of the corresponding mechanically exfoliated 1LG on the same substrate. Once the CVD-grown 1LG is distinguished, all the layer numbers of CVD-MLG flakes can be ascertained by the peak positions of their layer-breathing modes. The stacking sequence of a CVD-MLG flake can be determined by the shear modes, and the twist angles of twisted interfaces in the CVD-MLG flake are accessible by the so-called R modes. In this way, one can determine whether an MLG sample exhibit a fully nonstacked arrangement or if 2 or 3 of these layers are stacked in the AB stacking, including the order where the stacked layers would appear with respect to the nonstacked layers. This reliable way to identify the stacking orders advances an important step for the characterization of CVD-MLGs, shedding light on tailoring the properties of CVD-MLGs with specific stacking order on demand.

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Section: Resultssupporting

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Identifying the stacking order of multilayer graphene grown by chemical vapor deposition via Raman spectroscopy

Lin

Chen

Lü

et al. 2017

J Raman Spectroscopy

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“…Chemical vapour deposition (CVD) method offers good prospects to produce large‐size graphene films due to its simplicity, controllability and cost‐efficiency . Many researches have verified that graphene can be catalytically grown on metallic substrates, like ruthenium (Ru), iridium (Ir), platinum (Pt), nickel (Ni) and copper (Cu) et al, and also can be directly grown on insulating substrates, such as SiC, SiO 2, sapphire, and h‐BN . Considering that direct graphene growth on desired insulating substrate without transfer process is promising for integration into silicon‐based technologies, it would be a favourable way for industrial application of graphene.…”

Section: Introductionmentioning

confidence: 99%

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Zhang

Qiu

et al. 2017

Advanced Science

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The exceptional properties of graphene make it a promising candidate in the development of next‐generation electronic, optoelectronic, photonic and photovoltaic devices. A holy grail in graphene research is the synthesis of large‐sized single‐crystal graphene, in which the absence of grain boundaries guarantees its excellent intrinsic properties and high performance in the devices. Nowadays, most attention has been drawn to the suppression of nucleation density by using low feeding gas during the growth process to allow only one nucleus to grow with enough space. However, because the nucleation is a random event and new nuclei are likely to form in the very long growth process, it is difficult to achieve industrial‐level wafer‐scale or beyond (e.g. 30 cm in diameter) single‐crystal graphene. Another possible way to obtain large single‐crystal graphene is to realize ultrafast growth, where once a nucleus forms, it grows up so quickly before new nuclei form. Therefore ultrafast growth provides a new direction for the synthesis of large single‐crystal graphene, and is also of great significance to realize large‐scale production of graphene films (fast growth is more time‐efficient and cost‐effective), which is likely to accelerate various graphene applications in industry.

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“…The diversity of atomic defects in TMDs originates from the binary elements and more complicated precursor decomposition/reduction reaction through intermediate products, compared to the involvement of only C (possible H) in the graphene growth. However, the exploration of the fundamental growth mechanism down to atomic scale is still quite limited until now, awaiting further in situ TEM studies. Another challenge is the defect engineering within or after the sample growth.…”

Section: Concluding Remarks and Perspectivesmentioning

confidence: 99%

Atomic Defects in Two‐Dimensional Materials: From Single‐Atom Spectroscopy to Functionalities in Opto‐/Electronics, Nanomagnetism, and Catalysis

et al. 2017

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Two-dimensional layered graphene-like crystals including transition-metal dichalcogenides (TMDs) have received extensive research interest due to their diverse electronic, valleytronic, and chemical properties, with the corresponding optoelectronics and catalysis application being actively explored. However, the recent surge in two-dimensional materials science is accompanied by equally great challenges, such as defect engineering in large-scale sample synthesis. It is necessary to elucidate the effect of structural defects on the electronic properties in order to develop an application-specific strategy for defect engineering. Here, two aspects of the existing knowledge of native defects in two-dimensional crystals are reviewed. One is the point defects emerging in graphene and hexagonal boron nitride, as probed by atomically resolved electron microscopy, and their local electronic properties, as measured by single-atom electron energy-loss spectroscopy. The other will focus on the point defects in TMDs and their influence on the electronic structure, photoluminescence, and electric transport properties. This review of atomic defects in two-dimensional materials will offer a clear picture of the defect physics involved to demonstrate the local modulation of the electronic properties and possible benefits in potential applications in magnetism and catalysis.

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High performance and stable perovskite solar cells using vanadic oxide as a dopant for spiro-OMeTAD

Abstract: Perovskite solar cells with vanadic oxide doping achieve a power conversion efficiency of 20.5%.

Cited by 92 publications

References 54 publications

Identifying the stacking order of multilayer graphene grown by chemical vapor deposition via Raman spectroscopy

Identifying the stacking order of multilayer graphene grown by chemical vapor deposition via Raman spectroscopy

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Atomic Defects in Two‐Dimensional Materials: From Single‐Atom Spectroscopy to Functionalities in Opto‐/Electronics, Nanomagnetism, and Catalysis

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