High‐Performance Broadband Tungsten Disulfide Photodetector Decorated with Indium Arsenide Nanoislands

Abstract

The 2D tungsten disulfide (WS2), as a typical transition metal dichalcogenide (TMD), has aroused intense research interests in photodetection. However, the limited detection wavelength ranges and low photoresponsivity hinder its further application. To promote the application of WS2 in optoelectronics fields, indium arsenide (InAs) nanoislands decorated WS2 are utilized to fabricate photodetectors in this work. Owing to the photogating effect and localized surface plasmon resonance (LSPR), a significant enhancement of photocurrent response (≈1 mA W−1) is obtained by coupling WS2 with InAs nanoislands. Furthermore, the extended detection wavelength up to 1060 nm is realized due to the efficient light absorption in IR range of InAs nanoislands. The high performance, stability, and reliability in ambient temperature strongly indicate that the InAs nanoislands/WS2 heterostructure can be considered as a promising material for TMDs‐based broadband optoelectronic devices in the future.

Photonic bandgap engineering in (VO2) n /(WSe2) n photonic superlattice for versatile near- and mid-infrared phase transition applications

“…Different metal contacts have been demonstrated to display both n-type and p-type conductivities [6][7][8]. WSe 2 was recently used for many potential applications such as dilute magnetic semiconductor [9], broadband photodetector [10,11], directional photoemission [12], single-photon emission [13], and supercapacitors [14].…”

Photoconduction Properties in Tungsten Disulfide Nanostructures

“…The versatile compound tungsten disulfide (WS 2 ), another promising member of the TMDs group, has been widely investigated in the field of optoelectronic device applications due to its high mobility and environmental stability [15][16][17][18][19]. The WS 2 possesses an indirect bandgap (1.4 eV) in its bulk form, and it converts to a direct bandgap (2.1 eV) for a monolayer [20,21]. Moreover, WS 2 has strong optical absorption, high spin-orbit coupling, and high photoluminescence and can be operated over wide temperatures [22][23][24].…”