Extended Abstracts of the 1999 International Conference on Solid State Devices and Materials 1999
DOI: 10.7567/ssdm.1999.b-2-2
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High Performance Buried Channel-pFETs Using Elevated Source/Drain Structure with Self-Aligned Epitaxial Silicon Sliver (SESS)

J. H. Lee1,
S. C. Lee2,
Noh Yeal Kwak3
et al.
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