Anneal treatment to reduce the creation rate of light-induced metastable defects in device-quality hydrogenated amorphous silicon Appl. Phys. Lett. 98, 201908 (2011); 10.1063/1.3592264 Effects of grain boundaries on performance and hot-carrier reliability of excimer-laser annealed polycrystalline silicon thin film transistors Optical absorption and Hall effect in (220) and (400) oriented polycrystalline silicon filmsThe effects of hot H 2 O-vapor annealing were investigated on local carrier transport properties over a few grain boundaries in polycrystalline silicon. It shows that hot H 2 O-vapor annealing effectively reduces grain-boundary dangling bonds and the potential barrier height. In addition, it narrows the distribution of the barrier height value significantly. These effects are thought to originate from oxidation in the vicinity of the film surface, and from hydrogenation in the deeper region. Our results suggest that H 2 O annealing can improve the carrier transport properties by opening up shorter percolation paths and by increasing the effective carrier mobility and density.

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