Fabrication and electron transport in multilayer silicon-insulator-silicon nanopillars

Abstract

Articles you may be interested inSingle-electron transistors based on self-assembled silicon-on-insulator quantum dotsWe report the fabrication of sub-0.1-m-diam silicon nanopillars with a polycrystalline silicon and silicon nitride multilayer structure. The polycrystalline silicon layers, which are 20 nm thick and are separated by 2-3 nm-thick silicon nitride tunnel barriers, make potentially useful structures for the observation of single-electron charging effects. Measurements of electron transport at 4.2 K between contacts at the top and bottom of the pillars show a zero current region and current steps attributed to Coulomb blockade.

Quantum Well Nanopillar Transistors

“…This is characteristic of Coulomb blockade in a system with two tunnel barriers and a single dominant island. [7,10] We can estimate approximately the theoretical value of the control gate capacitance C g. The thickness of the quantum well defined the structure is 3 nm. And, the diameter of the quantum well covered under the control gate of the device is 10 nm.…”

“…D. M. Pooley et al [6,7,8] showed the current-voltage characteristics of nano-pillars of polycrystalline silicon with two 2-3 nm thick silicon nitride tunnel barriers. Pillars with diameters between 45 and 100 nm showed a Coulomb blockade region and Coulomb staircase at 4.2 K. Moreover, Electron transport in silicon nanopillars with zero, one, or two silicon nitride barrier layers of 2 nm thicknesses showed Coulomb blockade and wide zero current regions are observed for some devices with two silicon nitride tunnel barriers.…”

Single-electron charging phenomena in silicon nanopillars with and without silicon nitride tunnel barriers

“…Details of wafer growth and pillar fabrication are published elsewhere 6 but an outline of the fabrication process is given here. Alternating layers of polysilicon and silicon nitride (Si 3 N 4 ) were grown by low pressure chemical vapor deposition using silane (SiH 4 ) and phosphine (PH 3 ) and heating to 900°C in ammonia (NH 3 ) without breaking vacuum which produces a self-limiting 2 nm thick silicon nitride layer.…”

Fabrication and electron transport in vertical silicon-silicon nitride-silicon multilayer nano-pillars

“…Fukuda et al [5] demonstrated that ultra thin Si 3 N 4 barriers can be formed in silicon pillars. D. M. Pooley et al [6,7,8] showed the current-voltage characteristics of nano-pillars of polycrystalline silicon with two 2-3 nm thick silicon nitride tunnel barriers. Pillars with diameters between 45 and 100 nm showed a Coulomb blockade region and Coulomb staircase at 4.2 K. Moreover, Electron transport in silicon nanopillars with zero, one, or two silicon nitride barrier layers of 2 nm thicknesses showed Coulomb blockade and wide zero current regions are observed for some devices with two silicon nitride tunnel barriers.…”