High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction

Jia, Menghan; Wang, Fang; Tang, Libin; Xiang, Jinzhong; Teng, Kar Seng; Lau, Shu Ping

doi:10.1186/s11671-020-3271-9

Cited by 67 publications

(32 citation statements)

References 26 publications

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“…Lately, sensory technology has evolved and is constantly growing to improve the quality of life and environmental protection. Hence, ZnO [2], TiO 2 [3], CuO/Cu 2 O [4], SnO/SnO 2 [5], and VO 2 /V 2 O 5 [6] are some examples of metal oxides and have been extensively studied for use as high-performance UV photodetectors [7]. These types of materials can have different structures, from nanowires to nanospheres, which have a direct influence on their performance in detection applications.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of a UV Photodetector Based on n-TiO2/p-CuMnO2 Heterostructures

et al. 2021

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The heterojunction based on n-TiO2 nanolayer/p-CuMnO2 thin film was achieved using an efficient two-step synthesis process for the fabrication of a UV photodetector. The first step consisted of obtaining the TiO2 nanolayer, which was grown on titan foil by thermal oxidation (Ti-TiO2). The second step consisted of CuMnO2 thin film deposition onto the surface of Ti-TiO2 using the Doctor Blade method. Techniques such as X-ray diffraction, UV-VIS analysis, SEM, and AFM morphologies were used for the investigation of the structural and morphological characteristics of the as-synthesized heterostructures. The Mott–Schottky analysis was performed in order to prove the n-TiO2/p-CuMnO2 junction. The I-V measurements of the n-TiO2 nanolayer/p-CuMnO2 thin film heterostructure confirm its diode characteristics under dark state, UV and visible illumination conditions. The obtained heterojunction, which is based on two types of semiconductors with different energy band structures, improves the separating results of charges, which is very important for high-performance UV photodetectors.

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Section: Introductionmentioning

confidence: 99%

Fabrication of a UV Photodetector Based on n-TiO2/p-CuMnO2 Heterostructures

et al. 2021

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“…β-Ga 2 O 3 exhibits n-type semiconducting behavior due to the presence of oxygen vacancies, similar to many other oxide semiconductors [9]. Most device fabrication approaches have adopted the Schottky junction or p-n heterojunction structure for practical applications [10,11]. Thus, suitable materials for fabricating a Schottky or p-n junction of Ga 2 O 3 are critical in achieving high device performance.…”

Section: Introductionmentioning

confidence: 99%

“…β-Ga 2 O 3 -based Schottky barrier diodes (SBDs) have been investigated for the development of high-voltage devices as well as solar-blind photodetectors [10,12,13]. Metal electrodes, such as Au (gold), Pt (platinum), and Ni (nickel), have been explored for the fabrication of β-Ga 2 O 3based SBDs [3,4,14,15].…”

Section: Introductionmentioning

confidence: 99%

Temperature-dependent device properties of γ-CuI and β-Ga2O3 heterojunctions

et al. 2021

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Temperature-dependent studies of Ga2O3-based heterojunction devices are important in understanding its carrier transport mechanism, junction barrier potential, and stability at higher temperatures. In this study, we investigated the temperature-dependent device characteristics of the p-type γ-copper iodide (γ-CuI)/n-type β-gallium oxide (β‐Ga2O3) heterojunctions, thereby revealing their interface properties. The fabricated γ-CuI/β-Ga2O3 heterojunction showed excellent diode characteristics with a high rectification ratio and low reverse saturation current at 298 K in the presence of a large barrier height (0.632 eV). The temperature-dependent device characteristics were studied in the temperature range 273–473 K to investigate the heterojunction interface. With an increase in temperature, a gradual decrease in the ideality factor and an increase in the barrier height were observed, indicating barrier inhomogeneity at the heterojunction interface. Furthermore, the current–voltage measurement showed electrical hysteresis for the reverse saturation current, although it was not observed for the forward bias current. The presence of electrical hysteresis for the reverse saturation current and of the barrier inhomogeneity in the temperature-dependent characteristics indicates the presence of some level of interface states for the γ-CuI/β‐Ga2O3 heterojunction device. Thus, our study showed that the electrical hysteresis can be correlated with temperature-dependent electrical characteristics of the β‐Ga2O3-based heterojunction device, which signifies the presence of surface defects and interface states. Article Highlights We revealed the interface properties of p-type γ-copper iodide (γ-CuI) and n-type β-gallium oxide (β-Ga2O3) heterojunction. The developed heterostructure showed a large barrier height (0.632 eV) at the interface, which is stable at a temperature as high as 473 K. We confirmed the current transport mechanism at the interface of the heterojunction by analyzing the temperature dependent current–voltage characterization. Graphic abstract

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“…Nickel oxide (NiO) thin films have potential applications in electrochromic devices, photovoltaic (PV) solar cells, photodetectors, light‐emitting diodes, and ultraviolet detectors 1–5 . However, applications that employ NiO thin films require extensive investigation of their optoelectronic properties.…”

Section: Introductionmentioning

confidence: 99%

Dopant concentration influence on the optical properties of NiO thin films doped by Al and Nb deposited by DC and RF magnetron sputtering

Bayahia

Shirbeeny

2022

Surface & Interface Analysis

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Optical characteristics of nickel oxide (NiO) can be fine‐tuned to match specific application prerequisites. Doping NiO with Al or Nb influences the structure of its thin films, as they have d‐orbital ionic radii of 142.2 and 181.9 pm, far from the ionic radius of Ni2+ of 33.8 pm. Al‐ and Nb‐doped NiO thin films were deposited on silicon and quartz substrates using RF (Radio Frequency) and DC (Direct Current) reactive magnetron sputtering. The deposition powers on the dopant targets varied between 30 and 60 W in steps of 10 W. The XRD (X‐Ray Diffraction) analysis revealed no phase changes in the NiO structure. However, a shift toward a smaller angle was observed. The bandgap decreased to 3.30 eV. The metal‐doped NiO grains retained an average size of a few nanometers. The minimum resistivity of the Al‐doped NiO reached 0.0130 Ω.m, while it decreased to 0.0058 Ω.m for the Nb‐doped NiO. Using ellipsometry and effective medium approximation (EMA), it was possible to determine the refractive indices of the composites and dopants. The amount of dopants determined using this method was consistent with the deposition power. The influence of the dopant percentage on the optical properties of the doped NiO met the expectations. The optical and electrical properties of Al‐ and Nb‐doped NiO make them to be good candidates for electrochromic and optical sensor applications.

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High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction

Cited by 67 publications

References 26 publications

Fabrication of a UV Photodetector Based on n-TiO2/p-CuMnO2 Heterostructures

Fabrication of a UV Photodetector Based on n-TiO2/p-CuMnO2 Heterostructures

Temperature-dependent device properties of γ-CuI and β-Ga2O3 heterojunctions

Dopant concentration influence on the optical properties of NiO thin films doped by Al and Nb deposited by DC and RF magnetron sputtering

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