High-Performance Enhancement-Mode Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;/AlGaN/GaN-on-Si MISFETs With 626 MW/&lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;$\mathrm{cm}^{2}$ &lt;/tex-math&gt;&lt;/inline-formula&gt; Figure of Merit

Zhou, Qi; Chen, Bowen; Jin, Yang; Huang, Sen; Ke, Wei; Liu, Xinyu; Xu, Bin; Mou, Jinyu; Zhang, Bo

doi:10.1109/ted.2014.2385062

Cited by 77 publications

(24 citation statements)

References 28 publications

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“…For power switching applications, the enhancement-mode (E-mode) transistors are highly preferred rather than the depletion-mode (D-mode) devices for the inherent fail-safe operation and simple gate driver circuitry. Despite the various technologies proposed to realize E-mode, GaN HFETs such as p-cap gate [2, 3], fluorine plasma ion implantation [4], and cascode technology [5], the MOSFET with partially or fully recessed gate is considered as a promising candidate because of its high-threshold voltage ( V TH ), large gate swing for improved fail-safe capability [6, 7], and low on-resistance [8]. Moreover, the MOS-gate is compatible with the mainstream gate driver ICs.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device

et al. 2017

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Conductance method was employed to study the physics of traps (e.g., interface and bulk traps) in the Al2O3/GaN MOS devices. By featuring only one single peak in the parallel conductance (G p/ω) characteristics in the deep depletion region, one single-level bulk trap (E C-0.53 eV) uniformly distributed in GaN buffer was identified. While in the subthreshold region, the interface traps with continuous energy of E C-0.4~0.57 eV and density of 0.6~1.6 × 1012 cm−2 were extracted from the commonly observed multiple G p/ω peaks. This methodology can be used to investigate the traps in GaN buffer and facilitates making the distinction between bulk and interface traps.

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Section: Introductionmentioning

confidence: 99%

Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device

et al. 2017

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“…The R on,sp and breakdown voltage characteristics of both devices are plotted in Fig. in comparison with other reported normally off GaN devices [].…”

Section: Resultsmentioning

confidence: 99%

“…Being attracted, the gate recess technology has suffered from A plasma‐induced physical damage to the recessed surface and high interface trap density. It has been reported by several groups that the channel surface defects not only degraded the channel mobility but also caused trapping problems leading to hysteresis and threshold are voltage ( V th ) drift during switching operation . Such trapping issues play a very important role when MIS‐gate structures are used because of the high interface and bulk traps in the insulated gate.…”

Section: Introductionmentioning

confidence: 99%

“…When the fully recessed structure is used, the channel carrier density is reduced and the channel mobility is limited by rough surface. Several research groups have reported that the partially recessed MIS‐gate structure has benefits of lower interface trap density and higher transconductance with higher channel carrier density . Among the various dielectric materials, SiN x is one of potential candidates for AlGaN/GaN MIS‐HEMTs.…”

Section: Introductionmentioning

confidence: 99%

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High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiN _x MIS structure

Kang

Lee

Choi

et al. 2017

Phys. Status Solidi A

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Recessed MIS gate structures with SiNx gate dielectric layer were investigated for use in normally off AlGaN/GaN‐on‐Si high electron mobility transistors (HEMTs). The channel mobility and threshold voltage (Vth) instability were strongly affected by the recessed configuration. Employing a 30 nm SiNx gate dielectric layer composed of 6 nm PEALD and 24 nm ICP‐CVD films on a 2 nm AlGaN recessed barrier layer resulted in excellent electrical and dynamic characteristics with reduced effective interface trap density. A maximum drain current density of 590 mA mm−1, an on‐resistance of 0.75 mΩ · cm2, and a breakdown voltage of >1100 V were achieved for the gate‐to‐drain distance of 10 μm. Owing to the remaining AlGaN barrier layer under the recessed gate region of the partially recessed device, the interaction between MIS interface traps and channel electrons was suppressed effectively, resulting in improved channel mobility and Vth stability.

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“…26 The SiN x passivation layer of 100 nm was deposited by PECVD prior to the 20 nm ALD-Al 2 O 3 gate dielectric. The hybrid gate recess technology 13 was performed to precisely control the recess depth. The recessed-barrier-thickness T was then confirmed to be 4 nm by AFM that is well reconcile with the optimal trench depth obtained by simulation.…”

Section: Device Fabrication and Measurement Resultsmentioning

confidence: 99%

A Lateral AlGaN/GaN Diode with MIS-Gated Hybrid Anode for Ultra-Low Turn-On and High Breakdown Voltage

Zhou

Shi

Dong

et al. 2017

ECS J. Solid State Sci. Technol.

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In this paper, we propose and experimentally demonstrate a novel lateral AlGaN/GaN diode on Si substrate. The diode features a recessed metal/Al 2 O 3 /III-nitride (MIS)-gated ohmic hybrid anode, in which the drive current can be well controlled by the MIS-Gate and flows between the two ohmic contacts from the anode to the cathode with substantially reduced overall on-resistance (R on ). With this unique architecture, the forward turn-on voltage (V T ) of the diode can be flexibly trimmed, which enables a record low V T of 0.2 V obtained in the proposed diode. The incorporation of high-k dielectric in the recessed gate region and the AlGaN back barrier realize significantly leakage current (I leakage ) reduction yet high breakdown voltage (BV). The BV as high as 1100 V at I leakage less than 1 μA/mm with drift length of 20 μm is achieved in the proposed diode. The unique material properties of Gallium Nitride (GaN) enable excellent figure-of-merit for power electronic devices have been of great interest to researchers and engineers for the past two decades. In the case of lateral devices, the most distinctive feature of GaNbased materials is the high 2-dimensional electron gas (2DEG) density (e.g. ∼1 × 10 13 cm −2 ) generated at the interface of AlGaN/GaN heterojunction, which features exceptional electron mobility as high as ∼2000 cm 2 /V · s at room temperature 1 due to its strong piezoelectric and spontaneous polarization effect.2 Therefore, with the help of the wide bandgap property, the electronic devices based on AlGaN/GaN heterojunction are capable of achieving high switching speed, low switching loss, low conduction loss, high breakdown voltage and high temperature operation, which are highly preferred for power electronic applications.3 For power electronics the AlGaN/GaN on Si substrate has been considered as a promising technology for next generation power devices with low-cost and high performance due to the large diameter wafer up to 8-inch 4-6 and the well developed CMOS compatible process. As a result, the mass fabrication of AlGaN/GaN power devices with the mainstream CMOS fabrication lines becomes feasible. 7,8 Besides featuring the superior power performance, AlGaN/GaN-on-Si power devices can further be monolithically integrated with conventional Si CMOS circuits suggesting the possibility of realizing single-chip compact GaN power integrated circuits (ICs).9 For power applications, most of the aforementioned efforts have been focused on the three-terminal AlGaN/GaN transistors to achieve enhancement-mode (E-mode) operation, 10-15 low leakage current yet high breakdown voltage, [16][17][18] and low current collapse. 19-21On the other hand, the two terminal power diode as an indispensable component for switching power converters also attracts broad attention recently. 22-24In this work, a novel AlGaN/GaN MIS-Gated Hybrid Anode Diode (MG-HAD) that allows flexible control of the forward turn-on voltage (V T ) is demonstrated by simply varying the recess depth at the MIS-Gated region. It features a...

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High-Performance Enhancement-Mode Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN-on-Si MISFETs With 626 MW/<inline-formula> <tex-math notation="LaTeX">$\mathrm{cm}^{2}$ </tex-math></inline-formula> Figure of Merit

Cited by 77 publications

References 28 publications

Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device

Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device

High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiN _x MIS structure

A Lateral AlGaN/GaN Diode with MIS-Gated Hybrid Anode for Ultra-Low Turn-On and High Breakdown Voltage

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High-Performance Enhancement-Mode Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN-on-Si MISFETs With 626 MW/<inline-formula> <tex-math notation="LaTeX">$\mathrm{cm}^{2}$ </tex-math></inline-formula> Figure of Merit

Cited by 77 publications

References 28 publications

Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device

Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device

High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiN x MIS structure

A Lateral AlGaN/GaN Diode with MIS-Gated Hybrid Anode for Ultra-Low Turn-On and High Breakdown Voltage

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Product

Resources

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High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiN _x MIS structure