High-performance enhancement-mode InAlAs/InGaAs HEMTs using non-alloyed ohmic contact and Pt-based buried-gate

We investigate highly doped selectively regrown GaInAs ohmic contacts to GaInAs channel FETs to obtain a stable, reliable, and low resistance contact technology. We selectively regrow n+ GaInAs on various doped-channel FET structures and standard and doped-channel HEMTs. For lower doping concentrations on the regrown GaInAs (n c-1.5.101~ cm-3), we encounter instabilities at higher temperatures in the contacts when HF is employed in the processing steps. However, w t achieve temperature stable contacts with a contact resistance of 0.1 O m m regardless of the sample's exposure to HF when higher doping (n = 7.1018 cm-3) is incorporated in the regrowth process. We believe that we will be able to use this stable and low resistance contact technology to achieve high performance microwave transistors.

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High-performance enhancement-mode InAlAs/InGaAs HEMTs using non-alloyed ohmic contact and Pt-based buried-gate

Cited by 3 publications

References 9 publications

Field Effect TransistorsFETs and HEMTs

Field Effect TransistorsFETs and HEMTs

Improving threshold-voltage uniformity of0.1 µm InP-based MODFETs with different gate layouts

Selectively regrown ohmic contacts for high frequency and low noise FETs

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