Improving threshold-voltage uniformity of0.1 µm InP-based MODFETs with different gate layouts

Xu, Dong-Hui; Enoki, T.; Suemitsu, Tetsuya; Umeda, Yohtaro; Yamane, Y.; Ishii, Y.

doi:10.1049/el:19981118

Cited by 6 publications

(2 citation statements)

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“…This opening condition strongly affects the stability of cap recess etching speed owing to the effectiveness of the electrochemical etching effect. [24,25] Finally, gate electrodes are deposited to the gate opening region with bilayer resist patterns by the i-line stepper as shown in Figure 1d. Figure 4 shows a high-angle annular dark-field scanning transmission electron microscope (HAADF-STEM) image around a gate electrode of a fabricated InP-HEMT.…”

Section: Fabrication Process For Inp-hemt-based Thz-icsmentioning

confidence: 99%

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Systematic Study and Review of InP‐based Tera‐Hertz‐ICs Fabrication Process Technology for Beyond 5G/6G Wireless Communication Networks

Tsutsumi,

Sugiyama,

Hamada

et al. 2023

Physica Status Solidi (a)

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Next‐generation “Beyond 5G (B5G)/6G” wireless network systems have been researched and developed for meeting the rapid growth of mobile traffic. We report a high‐yield fabrication process of InP‐based transistors and tera‐hertz monolithic integrated circuits (THz‐ICs) with 300‐GHz operation, which is a candidate frequency for “Beyond 5G/6G” network systems. We mainly focus on a high‐yield and reproductive fabrication process of InP‐based high electron mobility transistors (HEMTs) while revisiting previous studies. We also describe the DC and RF characteristics of fabricated InP‐HEMTs from the viewpoint of integrating circuits. Then, we obtain high‐frequency performances of ft=280 GHz and fmax=860 GHz in the bias conditions of Vgs/Vds = 0.2 /1.1 V with good uniformity. Finally, we introduce InP‐based 300‐GHz‐band mixer and power amplifiers, to which a backside process is also applied for ensuring their stability and enhancing output power.This article is protected by copyright. All rights reserved.

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Section: Fabrication Process For Inp-hemt-based Thz-icsmentioning

confidence: 99%

“…This opening condition strongly affects the stability of cap recess etching speed owing to the effectiveness of the electrochemical etching effect. [ 24,25 ]…”

Section: Fabrication Process For Thz‐ics With Inp‐hemtsmentioning

confidence: 99%