Self-compensation of short-channel effects in sub-0.1-μm InAlAs/InGaAs MODFETs by electrochemical etching

Xu, Dong-Hui; Enoki, T.; Umeda, Yohtaro; Suemitsu, Tetsuya; Yamane, Y.; Ishii, Y.

doi:10.1109/55.735754

Cited by 7 publications

(1 citation statement)

References 9 publications

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“…Besides, short-channel effects (threshold-voltage shift towards large pinch-off voltage or the increase of the drain conductance) associated with traditional MESFETs are improved for these HDCFETs due to both thin Schottky barrier and thin doped-channel layers. This is because of the reduction of the aspect ratio (a/L g , where a is the effective distance between the gate metal and the channel, and L g is the gate length) [3,4]. Further, InGaP-related HDCFETs are considered as an alternate choice in replacing AlGaAs-and InAlAs-related ones [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Sub-0.25 micron gate-like heterojunction doped-channel FETs with a controllable notch-angle V-gate

Tan¹,

Hsu²,

Lin³

et al. 2003

Semicond. Sci. Technol.

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This paper reports the formation of GaAs V-grooves with well-controllable notch angles. The key methodology used to control the notch angle of a V-groove is to preset the temperature of the etching chemicals. Due to increased chemical reaction at the GaAs surface at high temperature, diffusion-limited etching dominates the etched process, resulting in highly isotropic etched profiles. It is found that the notch angle of a V-groove increases with increasing temperature of the etching chemicals. The etching angle used to define the slope of a V-groove increases from 30 to 55 • as the temperature decreases from 96 • C to 0 • C. Then V-gates formed by depositing Au metal on V-grooves with different notch angles were employed in the fabrication of InGaP/InGaAs heterojunction doped-channel FETs (HDCFETs). Effects of temperature-dependent notch angle on V-gate HDCFETs were investigated in detail, including dc, ac performances and short-channel effects. Experimental results reveal that a small notch-angle V-gate is quite promising for high-frequency applications. Finally, comparisons between simulated results for planar-gate HDCFETs and experimental results for V-gate HDCFETs are used to determine the equivalent gate length of a V-gate. It is found that the equivalent gate length of a V-gate is in the range of 0.1-0.2 µm.

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Section: Introductionmentioning

confidence: 99%

Sub-0.25 micron gate-like heterojunction doped-channel FETs with a controllable notch-angle V-gate

Tan¹,

Hsu²,

Lin³

et al. 2003

Semicond. Sci. Technol.

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Systematic Study and Review of InP‐based Tera‐Hertz‐ICs Fabrication Process Technology for Beyond 5G/6G Wireless Communication Networks

Tsutsumi,

Sugiyama,

Hamada

et al. 2023

Physica Status Solidi (a)

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Next‐generation “Beyond 5G (B5G)/6G” wireless network systems have been researched and developed for meeting the rapid growth of mobile traffic. We report a high‐yield fabrication process of InP‐based transistors and tera‐hertz monolithic integrated circuits (THz‐ICs) with 300‐GHz operation, which is a candidate frequency for “Beyond 5G/6G” network systems. We mainly focus on a high‐yield and reproductive fabrication process of InP‐based high electron mobility transistors (HEMTs) while revisiting previous studies. We also describe the DC and RF characteristics of fabricated InP‐HEMTs from the viewpoint of integrating circuits. Then, we obtain high‐frequency performances of ft=280 GHz and fmax=860 GHz in the bias conditions of Vgs/Vds = 0.2 /1.1 V with good uniformity. Finally, we introduce InP‐based 300‐GHz‐band mixer and power amplifiers, to which a backside process is also applied for ensuring their stability and enhancing output power.This article is protected by copyright. All rights reserved.

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Depletion- and enhancement-mode modulation-doped field-effect transistors for ultrahigh-speed applications: an electrochemical fabrication technology

Suemitsu

Ōsaka

et al. 2000

IEEE Trans. Electron Devices

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Self-compensation of short-channel effects in sub-0.1-μm InAlAs/InGaAs MODFETs by electrochemical etching

Cited by 7 publications

References 9 publications

Sub-0.25 micron gate-like heterojunction doped-channel FETs with a controllable notch-angle V-gate

Sub-0.25 micron gate-like heterojunction doped-channel FETs with a controllable notch-angle V-gate

Systematic Study and Review of InP‐based Tera‐Hertz‐ICs Fabrication Process Technology for Beyond 5G/6G Wireless Communication Networks

Depletion- and enhancement-mode modulation-doped field-effect transistors for ultrahigh-speed applications: an electrochemical fabrication technology

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