High-performance evanescently edge coupled photodiodes with partially p-doped photoabsorption layer at 1.55-/spl mu/m wavelength

Wu, Yelin; Shi, J.-W.; Wu, Jia; Huang, Feifei; Chan, Yi‐Jen; Huang, Yongqing; Xuan, Rong

doi:10.1109/lpt.2005.844010

Cited by 59 publications

(8 citation statements)

References 14 publications

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“…13c, and this type is often referred to as partially-doped absorber (PDA) PD [53][54][55][56]. The PDA-PD is essentially equivalent to the InP/InGaAs UTC-PD with an InP collector replaced by an InGaAs collector.…”

Section: Carrier Transport Designmentioning

confidence: 99%

High‐power RF photodiodes and their applications

Nagatsuma

Itô

Ishibashi

2009

Laser & Photonics Reviews

155

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There has been an increasing interest in photonic generation of RF signals in the millimeter-wave (30 GHz ∼ 300 GHz) and/or terahertz-wave (0.1 THz ∼ 10 THz) regions, and photodiodes play a key role in it. This paper reviews recent progress in the high-power RF photodiodes such as UniTraveling-Carrier-Photodiodes (UTC-PDs), which operate at these frequencies. Several approaches to increasing both the bandwidth and output power of photodiodes are discussed, and promising applications to broadband wireless communications and spectroscopic sensing are described.Photodiode chip is bonded to the substrate with the antenna. This is a symbolic figure of RF photonics in this article. Antenna Photodiode Light RF signal

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Section: Carrier Transport Designmentioning

confidence: 99%

High‐power RF photodiodes and their applications

Nagatsuma

Itô

Ishibashi

2009

Laser & Photonics Reviews

155

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“…The coupling and absorption rates are then dependent on the device design parameters. This phenomenon can be a practically important issue, particularly for thin-film group IV photodetector design cases, due to their low absorption coefficient, while many practical design cases of III-V waveguide-integrated photodetectors [24][25][26] are less affected by this phase-matchingsensitive coupling, as their thicknesses were often greater than or comparable to their absorption lengths because of their high absorption coefficients.…”

Section: Introductionmentioning

confidence: 99%

Efficient evanescent wave coupling conditions for waveguide-integrated thin-film Si/Ge photodetectors on silicon-on-insulator/germanium-on-insulator substrates

Ahn

Kimerling

Michel

2011

Journal of Applied Physics

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We studied evanescent wave coupling behavior between low index-contrast upper-level waveguides and thin-film Si and Ge photodetectors on SOI and germanium-on-insulator (GOI) substrates, respectively. We present a simple and intuitive leaky-mode phase-matching model using a ray-optics approach to determine the conditions for efficient coupling, both in 2D and 3D structures. It is shown that the presence of leaky modes that are phase-matched between the waveguide and the Si or Ge photodetector layer is the key condition for efficient coupling. Our approach was compared to other methods, such as finite-difference time domain (FDTD)=beam propagation method (BPM) and mode analysis. We report that, depending on the way a waveguide photodetector device is designed, waveguide-to-photodetector coupling efficiency may or may not be critically sensitive to design parameters, such as the photodetector layer thickness. As an example, the stark contrast of coupling behavior in the two most popular Ge photodetector structures integrated with Si rib waveguide versus channel waveguide is shown. The device design factors and the trends that affect such coupling sensitivity are identified and explained in the paper. V

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“…Traditionally, waveguide-photodetector integration has been primarily focused on III-V compound semiconductor devices [4]- [7]. Only since 2007 have there been experimental reports of waveguide-integrated germanium photodetectors [8]- [17].…”

Section: Introductionmentioning

confidence: 99%

Evanescent Coupling Device Design for Waveguide-Integrated Group IV Photodetectors

Ahn

Kimerling

Michel

2010

J. Lightwave Technol.

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We have fabricated vertical p-in silicon photodetectors that are monolithically integrated with compact silicon-oxynitride channel waveguides. By comparing the evanescent coupling from low index-contrast waveguides and compact, high index-contrast waveguides, the dependence of evanescent coupling behavior on the waveguide index and geometry designs was analyzed. The effects of fabrication variations in the coupling structure have been studied and it was found that an offsetting step in the waveguide can help compensate for the mode mismatch at the transition interface from the input bus waveguide to the waveguide on top of the photodetector. Finally, we present a design map, built by drawing the evanescent coupling rate contour lines in the waveguide design space, which well predicts the evanescent coupling trends.

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High-performance evanescently edge coupled photodiodes with partially p-doped photoabsorption layer at 1.55-/spl mu/m wavelength

Cited by 59 publications

References 14 publications

High‐power RF photodiodes and their applications

High‐power RF photodiodes and their applications

Efficient evanescent wave coupling conditions for waveguide-integrated thin-film Si/Ge photodetectors on silicon-on-insulator/germanium-on-insulator substrates

Evanescent Coupling Device Design for Waveguide-Integrated Group IV Photodetectors

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