Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)
DOI: 10.1109/asid.1999.762775
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High performance ferroelectric LC microdisplay

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“…The deep trench capacitor and the stack capacitor are helpful in reducing the layout area, but not economic for microdisplays in the typical CMOS process. As a result, the traditional 6T static random-access memory (SRAM) that is also applied in typical DMD or FLC microdisplays is implemented to remove the capacitor [12,26,36]. The W∕L ratio of the N-type metal-oxide-semiconductor (NMOS) in the SRAM is two and a half times that of the P-type metal-oxide-semiconductor (PMOS) to obtain the fastest switching speed.…”
Section: B Pixel Drivermentioning
confidence: 99%
“…The deep trench capacitor and the stack capacitor are helpful in reducing the layout area, but not economic for microdisplays in the typical CMOS process. As a result, the traditional 6T static random-access memory (SRAM) that is also applied in typical DMD or FLC microdisplays is implemented to remove the capacitor [12,26,36]. The W∕L ratio of the N-type metal-oxide-semiconductor (NMOS) in the SRAM is two and a half times that of the P-type metal-oxide-semiconductor (PMOS) to obtain the fastest switching speed.…”
Section: B Pixel Drivermentioning
confidence: 99%