High Performance Flexible Organic Field-Effect Transistors with Barium Strontium Titanate Gate Dielectric Deposited at Room Temperature

Abstract

Reducing the operating voltage and processing temperature are the crucial factors in the progression of organic field-effect transistors (OFETs) in flexible portable applications. Here, we have demonstrated RF sputtering deposited Ba 0.5 Sr 0.5 TiO 3 (BST) as high-k dielectric material for high performance operationally stable flexible low voltage operated OFETs. It was found that the BST deposition parameters can enormously affect the film properties like dielectric constant, surface morphology, and the crystallinity. The room-temperaturedeposited BST films were found to be amorphous in nature with low leakage current, high dielectric constant, smoother surface morphology and high electromechanical stability. The fabricated flexible OFETs with optimized BST film have shown excellent electrical performance with max. field-effect mobility (μ max ) of 1.01 cm 2 V −1 s −1 with near zero threshold voltage (V TH ) and I on /I off of ∼10 5 while operating at −5 V. The fabricated devices were found to be operationally and electromechanically stable when subjected to various electrical and mechanical stress. The investigation has demonstrated that the proposed room-temperature-deposited BST is a suitable candidate for gate dielectric in low voltage operated, long-term electromechanical stable flexible OFETs.

Transport in Twisted Crystalline Charge Transfer Complexes

“…Most recently, a stunning 7-order of magnitude enhancement in conductivity was reported for bent coronene crystals, a result in sharp contrast with the more modest changes described above. The frequency of contributions on the electromechanical analysis of organic semiconductors indicates that this is an inquiry likely to develop quickly in the near term, and may come into focus in tandem with the development of the basic science of mechanically dynamic molecular crystals. − …”

Enhancing Dielectric Properties of (CaCu3Ti4O12 NWs–Graphene)/PVDF Ternary Oriented Composites by Hot Stretching

“…Therefore, the preparation of nanofillers/polymer composites has become an effective way to further improve the dielectric properties . At present, the commonly used ceramic fillers include barium titanate (BT), − titanium dioxide (TiO 2 ), − and barium strontium titanate. , In addition, these ceramic nanoparticles can be transformed into one-dimensional nanowires or two-dimensional nanosheets to further improve the dielectric properties of the ceramic-filled composites. , Many studies have shown that one-dimensional ceramic fillers with high aspect ratios have greater advantages than spherical ceramic fillers in enhancing the dielectric constant of composites with low filler addition. However, regardless of what dimension of ceramic nanofillers is used, the dielectric constant of composites can be improved only when the high ceramic filling amount is greater than 50%, which often leads to the destruction of mechanical properties of composites.…”

Charge Transport in Twisted Organic Semiconductor Crystals of Modulated Pitch

“…[9,13] Naturally, altering intermolecular interactions and vibrational frequencies can influence electronics but teasing apart the static and dynamic influences on charge mobilities will require more collective attention as electromechanical analyses of organic semiconductors appear with increasing frequency. [13,14] A unified understanding may come into focus in tandem with the basic science of mechanically dynamic molecular crystals. [15][16][17][18] Electromechanical effects of twisting have yet to be examined.…”