eV, tunable carrier concentration, and excellent structural and thermal stability, is considered an exceptional candidate material for fabricating highperformance solar-blind UV PDs. [9][10][11][12] Previous PDs based on ZnGa 2 O 4 crystals grown at high substrate temperatures (>700 °C) were mainly constructed using planar photoconductive PDs. [13,14] Although these have high photoelectric gain, their practical application is limited by the problem of slow reaction rate due to persistent photoconductive (PPC) behavior and the need for external power supply. [1,15,16] Moreover, it is extremely difficult to obtain high-quality ZnGa 2 O 4 single-crystal substrate, and high growth temperatures limit the development of ZnGa 2 O 4 in flexible devices in terms of scalability, portability, flexibility, and wearability. [17,18] In particular, amorphous ZnGa 2 O 4 PDs exhibit competitive response properties in solar-blind UV band. [13] The oxygen atmosphere affects the performance of amorphous ZnGa 2 O 4 in the low-temperature deposition process. [2]