High Performance Heterostructure Low Barrier Diodes for Sub-THz Detection

Nadar, S.; Zaknoune, M.; Wallart, X.; Coinon, C.; Peytavit, E.; Ducournau, Guillaume; Gamand, F.; Thirault, Maxime; Werquin, M.; Jonniau, Sylvain; Thouvenin, Nicolas; Gaquière, Christophe; Vellas, N.; Lampin, Jean‐François

doi:10.1109/tthz.2017.2755503

Cited by 19 publications

(10 citation statements)

References 14 publications

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“…Hence, when the power source is switched in its ON state, the corresponding voltage value is shifted to (VON). Thus, the ratio between the delta voltage and the injected high frequency input power corresponds to the sensitivity of the detector (γ), described by equation (4).…”

Section: Fig 4 Test Bench Block Diagram To Perform On Wafer Power Dmentioning

confidence: 99%

“…Furthermore, these detectors can be used only in steady state. High frequency power detectors have been reported in the literature, using zero bias Schottky diode (SBD) [2], [3], heterostructure low barrier diode (HLBD) [4] and P-N diode [5]. However, part of these solutions has power limitations or are not compatible with silicon technology for Built-in self-test (BIST) application to perform integrated test.…”

Section: Introductionmentioning

confidence: 99%

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On Wafer Millimetre Wave Power Detection Using a PN Junction Diode in BiCMOS 55 nm for In-Situ Large Signal Characterization

Goncalves¹,

Alaji²,

Gloria³

et al. 2018

2018 48th European Microwave Conference (EuMC)

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This paper describes millimetre wave (mmW) onwafer power detection using dedicated high frequency diode junction with a cutoff frequency (fc) of 400 GHz, integrated in SiGe BiCMOS 55 nm technology from STMicroelectronics. This extraction was performed in order to develop fully integrated power detection for transistor or MMIC large signal characterisation on mmW frequency range above 110 GHz. The power detection is performed by biasing the diode in its forward regime. That allows us to obtain an adjustable voltage responsivity (γ) between 426 V/W and 3836 V/W at 320 GHz on the unmatched diode. In this configuration the corresponding dynamic range can be adjusted depending upon the configuration.

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Section: Fig 4 Test Bench Block Diagram To Perform On Wafer Power Dmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

On Wafer Millimetre Wave Power Detection Using a PN Junction Diode in BiCMOS 55 nm for In-Situ Large Signal Characterization

Goncalves¹,

Alaji²,

Gloria³

et al. 2018

2018 48th European Microwave Conference (EuMC)

Self Cite

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“…Today, one of the most important design issues for nanoelectronic devices based on AlGaAs-heterostructures is the prediction of their reliability indicators. Firstly, such devices are promising for use as the basis for ultrafast devices of a new generation [1,2] in industries related to high requirements for reliability [3,4]. Secondly, a high cost of testing and the time constraints on their implementation makes physical and mathematical simulation of aging devices [5] more attractive compared with a classical statistical method of the theory of reliability tests.…”

Section: Introductionmentioning

confidence: 99%

ABOUT AlGaAs-HETEROSTRUCTURES CVC KINETICS SIMULATION

Ветрова¹,

Kuimov²,

Мешков³

et al. 2019

RENSIT

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A model of degradation of AlGaAs-heterostructures is presented. The model of dissipative processes was extended to the case of a diffusion-blured aluminum profile. The definition of the Г-Х-mixing operator is generalized for potentials without explicit heterojunctions. The effect of degradation processes on inelastic scattering is taken into account by applying the diffusion equation to the optical potential profile. The self-consistency algorithm was optimized in order to reduce the calculation time. This paper proposes a faster method based on the reduction in the number of calculated integrals for electrons density. A number of test structures were simulated via developed algorithm. The deviation of the calculation results from the experimental data on the curvature of CVC initial section does not exceed 3%. Thus, we can conclude that it is expedient to use the model to calculate the kinetics of heterostructures СVC initial section at elevated temperatures, including within the framework of the task of predicting the GIC and MIC UHF reliability indicators based on multilayer AlGaAs-heterostructures.

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“…Nanoelectronics devices based on semiconductor A 3 B 5 nanoscale heterostructures are of interest as the basis for ultrafast devices of the new generation [1,2]. Research results [3,4] show that such devices have the potential for applications in industries with high reliability requirements.…”

Section: Introductionmentioning

confidence: 99%

Prediction of the electrical characteristics of heterostructural microwave devices with transverse current transfer based on a quantum-mechanical self-consistent model of a nanoscale channel with taking into account inter-valley scattering

et al. 2019

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A mathematical model of current transfer in AlGaAs- heterostructures with taking into account inter-valley dispersion and space charge in the process of degradation is presented. The developed computational algorithm is optimized by the criterion of temporal and spatial complexity. The relative deviation of the calculation results from the experimental data on the curvature of the initial portion of the current- voltage characteristic of the resonant tunnel diodes on AlGaAs- heterostructures is less than 3%.

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High Performance Heterostructure Low Barrier Diodes for Sub-THz Detection

Cited by 19 publications

References 14 publications

On Wafer Millimetre Wave Power Detection Using a PN Junction Diode in BiCMOS 55 nm for In-Situ Large Signal Characterization

On Wafer Millimetre Wave Power Detection Using a PN Junction Diode in BiCMOS 55 nm for In-Situ Large Signal Characterization

ABOUT AlGaAs-HETEROSTRUCTURES CVC KINETICS SIMULATION

Prediction of the electrical characteristics of heterostructural microwave devices with transverse current transfer based on a quantum-mechanical self-consistent model of a nanoscale channel with taking into account inter-valley scattering

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