High-performance hysteresis-free perovskite transistors through anion engineering

Zhu, Huihui; Liu, Guoxia; Shim, Kyu In; Jung, Ho Sang; Zou, Taoyu; Reo, Youjin; Kim, Hyun-Jun; Han, Jeong Woo; Chen, Yimu; Chu, Hye Yong; Lim, Jun Hyung; Kim, Hyungjun; Bai, Sai; Noh, Yong‐Young

doi:10.1038/s41467-022-29434-x

Cited by 78 publications

(56 citation statements)

References 61 publications

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“…Not long ago, the hysteresis effect in a p-type MASnX 3 perovskite FET was exceptionally reduced by the halide anion engineering [ 131 ] of the hybrid halide perovskite channel using bromide and chloride co-substitutions or partial iodide. In this study, it was observed that the co-substitution of the anions enhanced the quality of the film and reduced the vacancy defects as well.…”

Section: Challengesmentioning

confidence: 99%

“…As a result, the hysteresis effect was significantly reduced to a negligible level (0.1 V) in the transfer characteristics curves of Cl − and Br − incorporated MAPBI 3 channels, whereas the pristine MASnI 3 channel showed a notable 1.5 V difference between the forward and backward sweeps in the transfer curves. The mobility variation ratio of the forward and backward sweeps was reduced to 20% for Cl- and Br-incorporated MAPBI 3 -based FETs from the 45% of the pristine MASnI 3 channel FET [ 131 ]. Y. Liu et al reported that the hysteresis effect increases notably with the addition of SnI 4 to the (PEA) 2 SnI 4 channel; nevertheless, an enhancement was observed in the device current and on/off ratio [ 162 ].…”

Section: Challengesmentioning

confidence: 99%

“…H. Zhu et al found that MASnIxBryCl 1−x−y -based FETs operated in an ideal enhancement mode with a threshold voltage of 0V. Hence, an inverter was studied by using a p-type FASnX 3 -based FET along with n-type Indium Gallium Zinc oxide (IGZO) [ 131 ]. These studies lead to a pathway for future developments in inverters based on perovskite FETs.…”

Section: Challengesmentioning

confidence: 99%

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Review on Perovskite Semiconductor Field–Effect Transistors and Their Applications

et al. 2022

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Perovskite materials are considered as the most alluring successor to the conventional semiconductor materials to fabricate solar cells, light emitting diodes and electronic displays. However, the use of the perovskite semiconductors as a channel material in field effect transistors (FET) are much lower than expected due to the poor performance of the devices. Despite low attention, the perovskite FETs are used in widespread applications on account of their unique opto-electrical properties. This review focuses on the previous works on perovskite FETs which are summarized into tables based on their structures and electrical properties. Further, this review focuses on the applications of perovskite FETs in photodetectors, phototransistors, light emitting FETs and memory devices. Moreover, this review highlights the challenges faced by the perovskite FETs to meet the current standards along with the future directions of these FETs. Overall, the review summarizes all the available information on existing perovskite FET works and their applications reported so far.

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Section: Challengesmentioning

confidence: 99%

Section: Challengesmentioning

confidence: 99%

Section: Challengesmentioning

confidence: 99%

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Review on Perovskite Semiconductor Field–Effect Transistors and Their Applications

et al. 2022

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“…In the early research of perovskite-type transistors, two-dimensional organic–inorganic hybrid perovskite was used to prove the field-effect mobility of up to 2.6 cm 2 /V·s. In the latest research, H. Zhu et al demonstrated a high-performance hysteresis-free p-channel perovskite TFT with methylammonium tin iodide (MASnI3), and rationalized the effects of halide(I/Br/Cl) anion engineering [ 109 ]. This TFT has excellent electrical characteristics, with high hole mobilities of up to 20 cm 2 /V·s, an on/off current ratio exceeding 10 7 , and a threshold voltage of 0 V.…”

Section: P-type Oxide Film Progress and Challengesmentioning

confidence: 99%

Research Progress of p-Type Oxide Thin-Film Transistors

et al. 2022

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The development of transparent electronics has advanced metal–oxide–semiconductor Thin-Film transistor (TFT) technology. In the field of flat-panel displays, as basic units, TFTs play an important role in achieving high speed, brightness, and screen contrast ratio to display information by controlling liquid crystal pixel dots. Oxide TFTs have gradually replaced silicon-based TFTs owing to their field-effect mobility, stability, and responsiveness. In the market, n-type oxide TFTs have been widely used, and their preparation methods have been gradually refined; however, p-Type oxide TFTs with the same properties are difficult to obtain. Fabricating p-Type oxide TFTs with the same performance as n-type oxide TFTs can ensure more energy-efficient complementary electronics and better transparent display applications. This paper summarizes the basic understanding of the structure and performance of the p-Type oxide TFTs, expounding the research progress and challenges of oxide transistors. The microstructures of the three types of p-Type oxides and significant efforts to improve the performance of oxide TFTs are highlighted. Finally, the latest progress and prospects of oxide TFTs based on p-Type oxide semiconductors and other p-Type semiconductor electronic devices are discussed.

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“…Particularly, organic–inorganic perovskites have high intrinsic charge carrier mobilities that make them promising candidates for channel materials in field-effect transistors. High performance has been achieved in three-dimensional (3D) perovskite field-effect transistors , along with remarkable progress in perovskite solar cells. Derived from their 3D analogues, two-dimensional (2D) Ruddlesden–Popper (R–P) layered organic–inorganic perovskites − show improved water and oxygen stability as well as thermal stability under the protection of bulky hydrophobic organic cations.…”

Section: Introductionmentioning

confidence: 99%

Two-Dimensional Layered Simple Aliphatic Monoammonium Tin Perovskite Thin Films and Potential Applications in Field-Effect Transistors

Liu

et al. 2022

ACS Appl. Mater. Interfaces

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Two-dimensional (2D) layered organic−inorganic perovskites have great potential for fabricating field-effect transistors due to their unique structure that enables the horizontal transport of charge carriers in metal-halide octahedra, resembling the transport behavior in semiconducting channels. Their electronic band structures are mainly dominated by the metal-halide octahedra, which eventually determine the optical and electrical characteristics, whereas organic cations have no direct contributions but would impact the electronic structures via distorting the octahedra. So far, high performance has been achieved in 2D Sn perovskites compared to their Pb counterparts because the intrinsic differences of Sn promote transport properties. The champion hole mobility has been obtained in single-ring aromatic phenylethylammonium tin iodide perovskite [(PEA) 2 SnI 4 ]. However, simple aliphatic monoammonium tin perovskites and their device applications have rarely been reported. Herein, 2D layered nbutylammonium tin iodide perovskite [(BA) 2 SnI 4 ] thin films have been synthesized by a spin-coating approach. A structural phase transition occurs at about 225 K in the films, accompanied by the changes in the photoluminescence peak and exciton binding energy. Longitudinal optical (LO) phonons are found to govern the scattering of charge carriers and excitons via the Froḧlich interactions in the temperature range 77−300 K. The first-principles calculations predict that the perovskite has excellent transport characteristics comparable to those of molybdenum disulfide (MoS 2 ) and methylammonium lead iodide perovskite (MAPbI 3 ). The (BA) 2 SnI 4 thin film field-effect transistors constructed on polymer dielectrics with a maximum hole mobility of 0.03 cm 2 V −1 s −1 in ambient conditions have been successfully demonstrated for the first time. Our findings not only offer a deep insight into the physical properties of 2D layered aliphatic monoammonium tin perovskite thin films but also provide important experimental and theoretical guidance for their potential applications in lateral-type flexible optoelectronic devices.

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High-performance hysteresis-free perovskite transistors through anion engineering

Cited by 78 publications

References 61 publications

Review on Perovskite Semiconductor Field–Effect Transistors and Their Applications

Review on Perovskite Semiconductor Field–Effect Transistors and Their Applications

Research Progress of p-Type Oxide Thin-Film Transistors

Two-Dimensional Layered Simple Aliphatic Monoammonium Tin Perovskite Thin Films and Potential Applications in Field-Effect Transistors

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