“…Tunnel field-effect transistors (TFETs) are one of the next-generation candidates to compete with CMOS transistors at low voltage operation as it is able to achieve a subthreshold swing of less than 60 mV/decade [27]. Since the first introduction of TFET model [28], several research communities have provided open-source TFET models [16], [17], supporting different types of TFET physical structure, such as single-gate (SG) [19], [29], [30], double-gate (DG) [31]- [33], and gate-all-around [20], [34].…”