High performance low temperature metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for system-on-panel applications

Meng, Zhiguo; Wang, Mingxiang; Wong, Man

doi:10.1109/16.822287

Cited by 168 publications

(35 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Though there have been many variations of Ni-based MIC technology, such as confining crystallization catalyst nickel to specified regions for longitudinal poly-Si grains [6][7][8] or introducing tiny amount of nickel uniformly or randomly for large domain poly-Si, [9][10][11][12] the same crystallization mechanism is involved, i.e., the formation and migration of Ni silicide at the crystallization front. [13][14][15] When there is sufficient nickel at the crystallization front, a large amount of crystallization nuclei will be formed and poly-Si grains can grow simultaneously at the same speed such that the interface between the MIC poly-Si and the uncrystallized a-Si can keep smooth, but it will become ragged if the amount of nickel at the crystallization front is insufficient.…”

Section: Introductionmentioning

confidence: 99%

Crystallization of amorphous silicon beyond the crystallized polycrystalline silicon region induced by metal nickel

et al. 2017

View full text Add to dashboard Cite

Crystallization of amorphous silicon (a-Si) which starts from the middle of the a-Si region separating two adjacent metal-induced crystallization (MIC) polycrystalline silicon (poly-Si) regions is observed. The crystallization is found to be related to the distance between the neighboring nickel-introducing MIC windows. Trace nickel that diffuses from the MIC window into the a-Si matrix during the MIC heat-treatment is experimentally discovered, which is responsible for the crystallization of the a-Si beyond the MIC front. A minimum diffusion coefficient of 1.84 × 10 −9 cm 2 /s at 550 • C is estimated for the trace nickel diffusion in a-Si.

show abstract

Section: Introductionmentioning

confidence: 99%

Crystallization of amorphous silicon beyond the crystallized polycrystalline silicon region induced by metal nickel

et al. 2017

View full text Add to dashboard Cite

show abstract

“…With superior drive capability and performance stability, polycrystalline-silicon thin film transistors (poly-Si TFTs) have been utilized widely in high definition and fully integrated active matrix flat panel display (AM-FPD) applications. [1] For future high-level applications, such as monolithic three-dimensional integration [2] and system-onpanel circuits, [3,4] better performance is highly desirable for the poly-Si TFTs, e.g., higher drive capability, lower subthreshold swing (SS), and lower OFF-state current (I off ). However, there are numerous traps at the poly-Si/gate oxide interface and grain boundaries, resulting in degraded subthreshold swing (SS), high OFF-state current, low ON-state current (I on ), and high threshold voltage (V TH ).…”

Section: Introductionmentioning

confidence: 99%

Technology demonstration of a novel poly-Si nanowire thin film transistor

Liu¹,

Liang²,

Shan³

et al. 2016

Chinese Phys. B

View full text Add to dashboard Cite

A simple process flow method for the fabrication of poly-Si nanowire thin film transistors (NW-TFTs) without advanced lithographic tools is introduced in this paper. The cross section of the nanowire channel was manipulated to have a parallelogram shape by combining a two-step etching process and a spacer formation technique. The electrical and temperature characteristics of the developed NW-TFTs are measured in detail and compared with those of conventional planar TFTs (used as a control). The as-demonstrated NW-TFT exhibits a small subthreshold swing (191 mV/dec), a high ON/OFF ratio (8.5 × 10 7 ), a low threshold voltage (1.12 V), a decreased OFF-state current, and a low drain-induced-barrier lowering value (70.11 mV/V). The effective trap densities both at the interface and grain boundaries are also significantly reduced in the NW-TFT. The results show that all improvements of the NW-TFT originate from the enhanced gate controllability of the multi-gate over the channel.

show abstract

“…The Ni concentration within the induced front is higher than that within the MIC region, which will degrade the performances of poly-Si TFTs made in this area. [5,6] In this paper, a dynamic PSG gettering of the residual Ni in S-MIC poly-Si is proposed. The effects of PSG gettering process on the performances of solution-based metal induced crystallized poly-Si are discussed.…”

Section: Introductionmentioning

confidence: 99%